STS2321 P-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics

Description

SamHop Microelectronics Corp.STS2321 Oct .29 2004 V1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -20V .

📥 Download Datasheet

STS2321 Datasheet Preview — Preview of STS2321 PDF

Datasheet Specifications

Part number: STS2321
Manufacturer: SamHop Microelectronics
File Size: 555.13 KB
Datasheet: STS2321-SamHopMicroelectronics.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Features

* ( m W ) Max ID -3.2A RDS(ON) Super high dense cell design for low RDS(ON). 65 @ VGS = -4.5V 90 @ VGS =-2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Cont

STS2321 Distributors

📁 Related Datasheet

STS2320 STS2309A STS2336A STS20N3LLH6 STS20NHS3LL STS20T10

📌 All Tags

STS2321 P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

SamHop Microelectronics STS2321-like datasheet