STS2611 Datasheet (SamHop Microelectronics) - P-Channel E nhancement Mode Field Effect Transistor

STS2611, P-Channel E nhancement Mode Field Effect Transistor

S amHop Microelectronics C orp.

S T S 2611 F E B 25 2005 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -2.8A R DS (ON) S uper high dense cell design for low R DS (ON ).

90 @ V G S = -4.5V 150 @ V G S = -2.5V R ugged and reliable.

S OT-26 package.

1 2 5 6 TS OP 6 Top View D D D G 1 2 3 6 5 4 D D S G 3 4 S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage www.