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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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G050P03T P-Channel Enhancement Mode Power MOSFET Description The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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Advanced Power Electronics Corp. AP3P7R0EM Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirem

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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8N25/F8N25/I8N25/ E8N25/B8N25/D8N25 8A 250V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by

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G020N03T N-Channel Enhancement Mode Power MOSFET Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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PJS6839 60V Dual P-Channel Enhancement Mode MOSFET Voltage -60 V Current -300mA SOT-23 6L Features  RDS(ON), VGS@-10V, ID@-500mA<4Ω  RDS(ON),

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4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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G025N03T N-Channel Enhancement Mode Power MOSFET Description The G025N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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G07P04S P-Channel Enhancement Mode Power MOSFET Description The G07P04S uses advanced trench technology to provide excellent RDS(ON) , low gate char

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent

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G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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JCWT8CN2ES6 N-Channel Enhancement Mode Field Effect Transistor Marking and pin assignment Product Summary ● VDS ● ID ● RDS(ON)( at VGS=4.5V) ● RDS(O

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CYStek Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE020N10RF3 Spec. No. : C745F3 Issued Date : 2017.10.26 Revised Date : 2024.07.03 P

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JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features  30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V  Advanc

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GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent

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G050P03T P-Channel Enhancement Mode Power MOSFET Description The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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BSS84Q P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -50V RDS(ON) max 10Ω @ VGS = -5V ID TA = +25°C -130mA Features and Benefits • Low

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested

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