STS2622 Datasheet (SamHop Microelectronics) - Dual N-Channel Enhancement Mode Field Effect Transistor

STS2622, Dual N-Channel Enhancement Mode Field Effect Transistor

S T S 2622 S amHop Microelectronics C orp.

F eb,25 2005 V er1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2.5A R DS (ON) S uper high dense cell design for low R DS (ON ).

80 @ V G S = 4.5V 110 @ V G S = 2.5V R ugged and reliable.

TS OP 6 package.

D1 D2 TS OP 6 Top View G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Volta