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STS2622 Datasheet - SamHop Microelectronics

STS2622 Dual N-Channel Enhancement Mode Field Effect Transistor

S T S 2622 S amHop Microelectronics C orp. F eb,25 2005 V er1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2.5A R DS (ON) S uper high dense cell design for low R DS (ON ). 80 @ V G S = 4.5V 110 @ V G S = 2.5V R ugged and reliable. TS OP 6 package. D1 D2 TS OP 6 Top View G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Volta.

STS2622_SamHopMicroelectronics.pdf

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Datasheet Details

Part number:

STS2622

Manufacturer:

SamHop Microelectronics

File Size:

566.18 KB

Description:

Dual n-channel enhancement mode field effect transistor.

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STS2622 STS2622 Dual N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

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