S2308 Datasheet | Specifications & PDF Download

SSS2308 N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D SOT-23 80 @VGS = 4.5V 20V 2.3A 110 @VGS = 2.5V G S D F

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S2308 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 280mW 14A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching spe

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CES2308 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.4A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 36mΩ @VGS = 2.5V. High dense cell

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PRELIMINARY Data Sheet No.PD60266 revA IRS2308(S)PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • Fully operati

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S T S 2308A S amHop Microelectronics C orp. Dec 27 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E

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PRELIMINARY Data Sheet No.PD60266 revA IRS2308(S)PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • Fully operati

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