STS2308A Datasheet - SamHop Microelectronics

STS2308A N-Channel Enhancement Mode Field Effect Transistor

S T S 2308A S amHop Microelectronics C orp. Dec 27 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2.7A R DS (ON) S uper high dense cell design for low R DS (ON ). 80 @ V G S = 4.5V 110 @ V G S = 2.5V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T c=2.

STS2308A Datasheet (647.18 KB)

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Datasheet Details

Part number:

STS2308A

Manufacturer:

SamHop Microelectronics

File Size:

647.18 KB

Description:

N-channel enhancement mode field effect transistor.

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STS2308A N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

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