S4A - S4M Taiwan Semiconductor 4A, 50V - 1000V Su.
STMicroelectronics
STS4DNF60 - N-CHANNEL POWER MOSFET
STS4DNF60 N-channel 60V - 0.070Ω - 4A - SO-8 STripFET™ Power MOSFET Features Type STS4DNF60 ■ ■ VDSS 60V RDS(on) <0.090Ω ID 4A Standard outline fo.
Allied
TAA240S4D - Blower Coil
TAA Blower Coil Service Literature TAA−072−090−120−150−180−240 (02−09) TAA SERIES UNITS TAA model blower−coil unit s are designed for up flow or hori.
ST Microelectronics
STS4DPFS20L - P-CHANNEL POWER MOSFET
P-CHANNEL 20V - 0.07Ω - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 20 V SCHOTTKY IF(AV) 3A RDS(on) < 0..
ST Microelectronics
STS4DPF30L - Dual P-CHANNEL POWER MOSFET
DUAL P-CHANNEL 30V - 0.07 Ω - 4A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS4DPF30L s s STS4DPF30L VDSS 30 V RDS(on) <0.08 Ω ID 4A s T.
ST Microelectronics
STS4DNFS30L - N-CHANNEL POWER MOSFET
STS4DNFS30L N-channel 30 V, 0.044 Ω, 4 A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier Features MOSFET VDSS RDS(on) ID t(s)SCHOTTKY 30V IF(AV) .
ST Microelectronics
STS4DNF60L - N-CHANNEL POWER MOSFET
® STS4DNF60L N - CHANNEL 60V - 0.045Ω - 4A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS4DNF60L s s V DSS 60 V R DS(on) < 0.055 Ω ID 4A .
ST Microelectronics
STS4DNF30L - Dual N-CHANNEL POWER MOSFET
STS4DNF30L DUAL N-CHANNEL 30V - 0.039Ω - 4A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS4DNF30L s s VDSS 30 V RDS(on) < 0.050 Ω ID 4A s .
Allied Components International
PCS4D18 - Power Chip Shielded Inductors
RoHS Power Chip Shielded Inductors Dimensions: Inches (mm) PCS4D18 Allied Part Number Inductance (µh) Tolerance (%) Test Freq. DCR ( Ω) Rated C.
New Technology
AM-IRS4D - Infrared sensor module manual
New Technology Company http://www.NewTC.co.kr 적외선 센서 모듈 ( Model : AM-IRS4D ) 매뉴얼 뉴테크놀로지 컴패니(N.T.C) http://www.NewTC.co.kr 작성일 : 2007년 11월 24일 1 AM.
STMicroelectronics
S4DNF60 - N-CHANNEL POWER MOSFET
STS4DNF60 N-channel 60V - 0.070Ω - 4A - SO-8 STripFET™ Power MOSFET Features Type STS4DNF60 VDSS 60V RDS(on) <0.090Ω ID 4A ■ Standard outline fo.
ON Semiconductor
NTBGS4D1N15MC - Single N-Channel MOSFET
MOSFET - Single N-Channel 150 V, 4.1 mW, 185 A NTBGS4D1N15MC Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimiz.
ON Semiconductor
NVMYS4D6N06C - N-Channel Power MOSFET
MOSFET - Power, Single N-Channel 60 V, 4.7 mW, 92 A NVMYS4D6N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Con.
ON Semiconductor
FDMS4D5N08LC - N-Channel MOSFET
FDMS4D5N08LC MOSFET, N-Channel Shielded Gate, POWERTRENCH) 80 V, 116 A, 4.2 mW General Description This N−Channel MV MOSFET is produced using ON Sem.
ON Semiconductor
NVMYS4D5N04C - N-Channel Power MOSFET
MOSFET – Power, Single N-Channel 40 V, 4.5 mW, 80 A NVMYS4D5N04C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Co.
ON Semiconductor
NVMYS4D6N04CL - N-Channel Power MOSFET
NVMYS4D6N04CL MOSFET – Power, Single N-Channel 40 V, 4.5 mW, 78 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize C.
GME
GBS4D - Silicon Bridge Rectifiers
Production specification Silicon Bridge Rectifiers FEATURES z Rating to 1000V PRV z Surge overload rating to 120 Amperes peak z Reliable low cost con.
Micross
AS4DDR232M64PBG - 32M x 64 DDR2 SDRAM
iPEM 2.1 Gb SDRAM-DDR2 AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES DDR2 Data rate = 667, 533, 400 Availab.
Allied
TAA180S4D - Blower Coil
TAA Blower Coil Service Literature TAA−072−090−120−150−180−240 (02−09) TAA SERIES UNITS TAA model blower−coil unit s are designed for up flow or hori.
Allied
TAA150S4D - Blower Coil
TAA Blower Coil Service Literature TAA−072−090−120−150−180−240 (02−09) TAA SERIES UNITS TAA model blower−coil unit s are designed for up flow or hori.
Allied
TAA090S4D - Blower Coil
TAA Blower Coil Service Literature TAA−072−090−120−150−180−240 (02−09) TAA SERIES UNITS TAA model blower−coil unit s are designed for up flow or hori.