FDMS4D5N08LC
FDMS4D5N08LC is N-Channel MOSFET manufactured by onsemi.
MOSFET, N-Channel Shielded Gate, POWERTRENCH)
80 V, 116 A, 4.2 m W
General Description This N- Channel MV MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on- state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Shielded Gate MOSFET Technology
- Max r DS(on) = 4.2 m W at VGS = 10 V, ID = 37 A
- Max r DS(on) = 6.1 m W at VGS = 4.5 V, ID = 29 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- Ro HS pliant
Typical Applications
- Primary DC- DC MOSFET
- Synchronous Rectifier in DC- DC and AC- DC
- Motor Drive
- Solar
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
±20
Drain Current
- Continuous TC = 25°C (Note 5) 116
- Continuous TC = 100°C
(Note 5)
- Continuous TA =...
