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MOSFET - Power, Single N-Channel, PQFN8
120 V, 4.0 mW, 114 A
FDMS4D0N12C
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These are Pb−free, Halogen Free / BFR Free and are RoHS
Compliant
Typical Applications
• Synchronous Rectification • AC−DC and DC−DC Power Supplies • AC−DC Adapters (USB PD) SR • Load Switch
MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
120
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Steady TC = 25°C
ID
Current RθJC
State
(Note 7)
114
A
Power Dissipation
PD
RθJC (Note 2)
Continuous Drain Steady TA = 25°C
ID
Current RθJA
State
(Note 6, 7)
106
W
18.
FDMS4D0N12C Datasheet
