AS4DDR32M16
AS4DDR32M16 is 8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS manufactured by Austin Semiconductor.
Austin Semiconductor, Inc. 8 Meg x 16 x 4 Banks
Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit
Features
- VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
- Bidirectional data strobe (DQS) transmitted/received with data, i.e., source-synchronous data capture (has two
- one per byte)
- Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
- Differential clock inputs (CK and CK#)
- mands entered on each positive CK edge
- DQS edge-aligned with data for READs; center-aligned with data for WRITEs
- DLL to align DQ and DQS transitions with CK
- Four internal banks for concurrent operation
- Data mask (DM) for masking write data (has two- one per byte)
- Programmable burst lengths: 2, 4, or 8
- Auto Refresh and Self Refresh Modes
- Longer lead TSOP for improved reliability (OCPL)
- 2.5V I/O (SSTL_2 patible)
- Concurrent auto precharge option is supported
- t RAS lockout supported (t RAP = t RCD)
CO TS PEM COTS SDRAM
(Top View)
PIN ASSIGNMENT
FIGURE 1: 66-Pin TSOP
OPTIONS
- Configuration 32 Meg x 16 (8 Meg x 16 x 4 banks)
- Packaging Plastic 66-pin TSOPII (400 mil width, 0.65mm pin pitch)
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MARKING
32M16
Configuation Refresh Count Row Addressing Bank Addressing Column...
