AS4DDR16M72PBG
AS4DDR16M72PBG is 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit manufactured by Austin Semiconductor.
i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM i NTEGRATED Plastic Encapsulated Microcircuit
Features
- DDR SDRAM Data Rate = 200, 250, 266, 333Mbps
- Package:
BENEFITS
- 40% SPACE SAVINGS
- Reduced part count
- Reduced I/O count
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219 Plastic Ball Grid Array (PBGA), 32 x 25mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 patible) Differential clock inputs (CLK and CLK#) mands entered on each positive CLK edge Internal pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Programmable Burst length: 2,4 or 8 Bidirectional data strobe (DQS) transmitted/received with data, i.e., source-synchronous data capture (one per byte) DQS edge-aligned with data for READs; center-aligned with data for WRITEs DLL to align DQ and DQS transitions with CLK Four internal banks for concurrent operation Two data mask (DM) pins for masking write data Programmable IOL/IOH option Auto precharge option Auto Refresh and Self Refresh Modes Industrial, Enhanced and Military Temperature Ranges Organized as 16M x 72/80 Weight: AS4DDR16M72PBG = 3.50 grams typical
- 34% I/O Reduction
- Reduced trace lengths for lower parasitic capacitance
- Suitable for hi-reliability applications
- Laminate interposer for optimum TCE match
- Upgradeable to 32M x 72 density
(AS4DDR32M72PBG)
- Meets or exceeds published specifications of
White’s W3E16M72S-XBX
- This product and or it’s specifications is subject to change without notice..
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Monolithic Solution
O P T I O N...