AS4DDR264M64PBG1
AS4DDR264M64PBG1 is 64Mx64 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit manufactured by Austin Semiconductor.
i PEM 4.2 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR264M64PBG1 64Mx64 DDR2 SDRAM w/ SHARED CONTROL BUS i NTEGRATED Plastic Encapsulated Microcircuit
Features
- -
- DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp Package:
- Proprietary Enchanced Die Stacked i PEM
- 208 Plastic Ball Grid Array (PBGA), 16 x 23mm
- 1.00mm ball pitch Differential data strobe (DQS, DQS#) per byte Internal, pipelined, double data rate architecture 4n-bit prefetch architecture DLL for alignment of DQ and DQS transitions with clock signal Eightinternal banks for concurrent operation (Per DDR2 SDRAM Die) Programmable Burst lengths: 4 or 8 Auto Refresh and Self Refresh Modes (I/T Version) On Die Termination (ODT) Adjustable data
- output drive strength 1.8V ±0.1V mon core power and I/O supply Programmable CAS latency: 3, 4, 5, 6 or 7 Posted CAS additive latency: 0, 1, 2, 3, 4 or 5 Write latency = Read latency
- 1- t CK Organized as 64M x 64 Weight: AS4DDR264M64PBG1 ~ 2.0 grams typical
BENEFITS
- -
- -
- - 58% Space Savings 49% I/O reduction vs Individual CSP approach Reduced part count Reduced trace lengths for lower parasitic capacitance Suitable for hi-reliability applications Upgradable to 128M x 64 density in future
- -
- -
- -
- -
- -
- -
- -
- NOTE: Self Refresh Mode available on Industrial and Enhanced temp. only
.. FUNCTIONAL
Ax, BA0-2
BLOCK DIAGRAM
ODT VRef VCC VCCQ VSS VSSQ VSSQ VCCL VSSDL VCCQ VSSQ VCCL A VSSDL B VCCQ VSSQ VCCL VSSDL C VCCQ VSSQ VCCL VSSDL D
CS WE RAS CAS CKE
2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2
ODT UDMx, LDMx UDSQx,UDSQx LDSQx, LDSQx CKx,CKx A
DQ0-15 B
DQ16-31...
