S65 Datasheet | Specifications & PDF Download

IPAN65R650CE MOSFET 650V CoolMOS™ CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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Hear Aiding MEMS Microphone ZTS6554 DESCRIPTION The ZTS6554 is a high quality, low voltage, low power analog output bottom-ported omni-directional M

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TPS65161 TPS65161A, TPS65161B www.ti.com SLVS617E – APRIL 2006 – REVISED MARCH 2013 BIAS POWER SUPPLY FOR TV AND MONITOR TFT LCD PANELS Check for Sa

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The µPD4264405, 42S65405,

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MAXIMUM RATINGS NPN MPS6512 thru MPS6515 PNP Rating Symbol Collector-Emitter Voltage MPS6512, MPS6513 MPS6514, MPS6515 MPS6516thru MPS6518 MPS6519

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www.DataSheet4U.com FMS6502 8-Input, 6-Output Video Switch Matrix with Output Drivers, Input Clamp, and Bias Circuitry January 2007 FMS6502 8-Input

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AOW7S65/AOWF7S65 650V 7A α MOS TM Power Transistor General Description The AOW7S65 & AOWF7S65 have been fabricated using the advanced αMOSTM high vol

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Product Folder Order Now Technical Documents Tools & Software Support & Community TPS650250 SLVS843B – DECEMBER 2008 – REVISED MAY 2018 TPS650250

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AIDW16S65C5 CoolSiC™ Automotive Schottky Diode 650V G5 650V/16A Silicon Carbide Schottky Diode in TO247-3 Features  Revolutionary semiconductor mate

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isc N-Channel MOSFET Transistor AOW11S65 FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

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N R N-CHANNEL MOSFET MS65R044R MAIN CHARACTERISTICS Package ID 80A VDSS 650 V Rdson-max(@Vgs=10V） 0.044Ω Qg-typ 187.8 nC    LED

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N R N-CHANNEL MOSFET MS65R120 MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 30A 650 V 0.120Ω 58.4 nC    LED APPL

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NXP Semiconductors Data sheet: Technical Data 17 mOhm and 7.0 mOhm high-side switches The 12XS6 is the latest SMARTMOS achievement in automotive light

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1ED21x7x Family 1ED21x7x Family Datasheet 650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and

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AIDK12S65C5 CoolSiC™ Automotive Schottky Diode 650V G5 650V/12A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) Features  Revolutionary semico

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DATA SHEET NPN MPS6512 MPS6513 MPS6514 MPS6515 PNP MPS6516 MPS6517 MPS6518 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test 

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DM74AS651 • DM74AS652 Octal Bus Transceiver and Register October 1986 Revised March 2000 DM74AS651 • DM74AS652 Octal Bus Transceiver and Register Ge

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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