SA12 Datasheet | Specifications & PDF Download

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3182

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Li

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NICHIA STS-DA1-6476D NICHIA CORPORATION SPECIFICATIONS FOR AMBER LED PART NO. NFSA123GT (L3x Spec.) Applications ● Pb-free Reflow Sold

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UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1201 is designed for power

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ST 2SA1268 PNP Silicon Epitaxial Planar Transistor For high voltage applications. The transistor is subdivided into two groups, G and L according to i

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KSA1203 PNP Epitaxial Silicon Transistor July 2005 KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application •

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2SA1201 PNP Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor SOT-89 FEATURES z High voltage z High transition fr

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NICHIA STS-DA1-5532G NICHIA CORPORATION SPECIFICATIONS FOR AMBER LED PART NO. NFSA123FT ● Pb-free Reflow Soldering Application ● ESD W

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GD50FSA120L2SF STARPOWER SEMICONDUCTOR GD50FSA120L2SF 1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low co

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7MBR25SA120 IGBT MODULE (S series) 1200V / 25A / PIM IGBT Modules Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bri

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KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Boa

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KSA1281 KSA1281 Audio Power Amplifier • Collector Power Dissipation : PC=1W • 3 Watt Output Application 1 TO-92L 1. Emitter 2. Collector 3. Base

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2SA1213-O/2SA1213-Y Features • High Speed Switching Time • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead F

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1225 TRANSISTOR (PNP) FEATURES z High Transition Freq

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www.DataSheet4U.com RSA12L Diodes ESD Protection Device (TVS) RSA12L zApplications ESD Protection zDimensions (Unit : mm) z Land size figure (Unit :

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Ordering number:EN781F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications F

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isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Low Collector Saturatioin Voltage

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