AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS SA5.0 - S.
UTC
15
2SA1774 - PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Compleme.
GME
14
2SA1797 - PNP Transistor
Production specification PNP Silicon Epitaxial Planar Transistor FEATURES Low saturation voltage VCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A). Excell.
Sanyo Semicon Device
12
2SA1708 - PNP/NPN Epitaxial Planar Silicon Transistors
Ordering number:ENN3094 www.DataSheet4U.com PNP/NPN Epitaxial Planar Silicon Transistors 2SA1708/2SC4488 High-Voltage Switching Applications Feature.
NEC
12
A1742 - 2SA1742
DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for.
Panasonic
11
A1767 - 2SA1767
Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A ■ Features • High collector-emitter voltage.
Sanyo Semicon Device
11
A1704 - 2SA1704
Ordering number:EN3024 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1704/2SC4484 High-Current Driver Applications www.datasheet4u.com Applicatio.
Inchange Semiconductor
10
2SA1757 - POWER TRANSISTOR
isc Silicon PNP Power Transistor 2SA1757 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Switching Speed ·Low Saturati.
Rohm
10
2SA1774EB - PNP -150mA -50V General Purpose Transistors
2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576U3 / 2SA1037AK General purpose Transistor (-50V, -150mA) Datasheet Parameter VCEO IC Value -50V -1.
GME
10
2SA1736 - PNP Transistor
PNP Epitaxial Planar Silicon Transistor FEATURES z Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) Pb Lead-free z High speed switchi.
Sanyo Semicon Device
8
2SA1786 - PNP Epitaxial Planar Silicon Transistor
Ordering number:EN3512B Features · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1786 : PNP Epitaxial Planar Silicon Trans.
Sanyo
8
A1710 - 2SA1710
Ordering number:EN3097 Features · High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process. PNP/NPN .
ON Semiconductor
7
2SA1774 - PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS
2SA1774 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is ho.
Sanyo Semicon Device
7
2SA1798 - PNP Epitaxial Planar Silicon Transistors
Ordering number:EN3709 Features · Adoption of MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. PNP Epitaxi.
Sanyo Semicon Device
7
A1770 - 2SA1770
Ordering number:ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features · Adoption of MBIT.
Sanyo
7
A1703 - 2SA1703
Ordering number:EN3023 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1703/2SC4483 Low-Frequency Amplifier, Electronic Governor Applications Feature.
Sanyo
7
A1705 - 2SA1705
Ordering number:EN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications · Voltag.
Sanyo
7
A1740 - 2SA1740
Ordering number:ENN3188 Features · High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity. PNP Epitaxial Planar Silicon Trans.
NICHIA
7
NFSA172AT - LED
NICHIA STS-DA1-3168D
INCHANGE
7
2SA1773 - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage: V(BR)CEO >-400V @IC=-1mA ·Large current capacity ·Minimum Lot-to-Lot variations.