SA7.0 Datasheet | Specifications & PDF Download

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.k

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DATA SHEET PNP SILICON TRANSISTOR 2SA733 PNP SILICON TRANSISTOR DESCRIPTION The 2SA733 is designed for use in diver stage of AF amplifier. FEATURES

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ST 2SA708 PNP Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided i

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2SA733 — PNP General Purpose Amplifier 2SA733 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier applicat

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2×6W AUDIO POWER AMPLIFIER SA7454 DESCRIPTION SA7454 is a Class AB dual audio power amplifier. It adopts HSIP-9 or DIP-18IH-300-2.54 package. FEATU

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ST 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y,

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isc Silicon PNP Power Transistor 2SA771 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -80(V)(Min.) ·Complement to Type 2SC1986 ·Minim

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Transistors 2SA708

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isc Silicon PNP Power Transistor 2SA769 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -80(V)(Min.) ·Complement to Type 2SC1827 ·Minim

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Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 an

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Power Transistors 2SA0794 (2SA794), 2SA0794A (2SA794A) Silicon PNP epitaxial planar type For low-frequency output driver Complementary to 2SC1567, 2S

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isc Silicon PNP Power Transistor 2SA765 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- :

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SMD Type Features Collector-Base Voltage: VCBO=-60V TTrraannssiissttoorrss PNP Transistors 2SA733 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 Unit: mm

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SA78RXX_Datasheet 1A LDO VOLTAGE REGULATOR DESCRIPTION The SA78RXX is a positive low voltage dropout regulator, the voltage dropout is below 0.5V at

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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isc Silicon PNP Power Transistor 2SA740 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC=

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