SA8.0 Datasheet | Specifications & PDF Download

MCC TM Micro Commercial Components
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2.0-7.0V 1.8A H SA8301 。/ // SA8301， ， ，， 、 。 SA8301 ⚫ 2.0-7.0V ⚫ 1.8A,2.5A ⚫ (typ.0.1uA) ⚫ （typ.60uA） ⚫ ; ⚫ SOP8 ⚫ 2-4 ⚫ 2-4/ ⚫ 1 SA8301

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2SA872, 2SA872A Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC1775/A Outline TO-92 (1) 1. Emit

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA818 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO

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Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-

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， SA8108 SA8108 ， ，MOS。 SA8108100mA，500mA 4.2V 。 SA81086.5V。 1.5A, 2.5A. ，， ，。 SA8108。 ⚫ : 4.0-6.5V ⚫ (typ.1.0uA) ⚫ 1.5A, 2.5A ⚫ ⚫ ⚫ ⚫ ⚫

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DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE =

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Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-

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Free Datasheet http://www.Datasheet4U.com

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2SA872, 2SA872A Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC1775/A Outline TO-92 (1) 1. Emit

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FSA831 — USB2.0 High-Speed (480Mbps) Charger Detector with Isolation Switch FSA831 — USB2.0 High-Speed (480Mbps) Charger Detection with Isolation Swi

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 2SA817 Audio Frequency Amplifier Applications Unit: mm · Complementary to 2SC16

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PNP General Purpose Transistors P b Lead(Pb)-Free 2SA812 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Vo

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. S-L2SA812Q

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SA5.0~SA220CA GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR POWER 500 Watt STAND-OFF VOLTAGE 5 to 220 Volt FEATURES • Plastic package has

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2SA838(3CG838) PNP /SILICON PNP TRANSISTOR ：， 2SC1359(3DG1359)。 Purpose: For low-frequency amplification, complementary to 2SC1359(3DG1359). :。 Fea

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES • High Breakdown Voltag

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2SA821S Transistors High-voltage Amplifier Transistor (−210V, −30mA) 2SA821S zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the

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