SB101 Datasheet | Specifications & PDF Download

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features

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SavantIC Semiconductor www.DataSheet4U.com Product Specification www.DataSheet4U.com Silicon PNP Power Transistors 2SB1018 DESCRIPTION ·With TO-2

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NSB1010XV5T5 Preferred Device Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bia

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GPUSB101A USB Bridge Controller Sep 24, 2014 Version 1.4 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior not

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NSB1011XV6T5 Preferred Device Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bia

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isc Silicon PNP Power Transistor KSB1017 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Compl

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isc Silicon PNP Power Transistor KSB1015 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Comp

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www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power

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2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2.

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation volta

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ऍໜႝηԖज़Ϧљ MAYLOON ELECTRONIC CO., LTD., SINLOON® ߕ௽ഗԲᄕጥ Case: ITO-220 SB1020FCT - SB10100FCT 10A Dual Schottky Barrier Rectifier ϭ Feature Ϭ Schott

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Panasonic Industrial Company Aluminum Electrolytic Capacitors TS-HA/HB Series 105°C, 3000 hours Long 3000 hour life at 105°C with high ripple curr

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UNISONIC TECHNOLOGIES CO., LTD SB10100 Preliminary 10A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC SB10100 is a Schottky Rectifier with high

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SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to ty

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Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low

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KSB1017 KSB1017 Power Amplifier Applications • Complement to KSD1408 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Abs

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Schottky Barrier Rectifier Formosa MS SB1020CT THRU SB10200CT List List

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Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

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