SB101 Datasheet | Specifications & PDF Download

Chip Integration Technology Corporation CSB10100CT-A Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) VRRM TJ V(T

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NSB1011XV6T5 Preferred Device Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bia

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SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to ty

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SEMICONDUCTOR DATA SHEET SB1020FCT~SB10200FCT 10A SCHOTTKY BARRIER RECTIFIER ITO-220AB FEATURES Schottky Barrier Chip Guard Ring for Transient Pro

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www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power

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isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Comp

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2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2.

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: SILICON PNP TRIPLE DIFFUSED TYPE 1 2SB1015 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. 10.3MAX. Unit in mm FEATURES . Low Collector Saturati

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KSB1015 KSB1015 Low Frequency Power Amplifier • Low Collector Emitter Saturation Voltage • Complement to KSD1406 1 TO-220F 2.Collector 3.Emitter 1

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ऍໜႝηԖज़Ϧљ MAYLOON ELECTRONIC CO., LTD., SINLOON® ߕ௽ഗԲᄕጥ Case: ITO-220 SB1020FCT - SB10100FCT 10A Dual Schottky Barrier Rectifier ϭ Feature Ϭ Schott

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SEMICONDUCTOR DATA SHEET SB1020FCT~SB10200FCT 10A SCHOTTKY BARRIER RECTIFIER ITO-220AB FEATURES Schottky Barrier Chip Guard Ring for Transient Pro

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NSB1010XV5T5 Preferred Device Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bia

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www.DataSheet4U.com DATA SHEET SB1020FCT~SB10150FCT ISOLATION SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES .112(2.85) .100(2.55) .272(6.9) .248(6.3)

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION ·With TO-220Fa package ·Collect

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2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2.

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low

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SB10150 Technical Data Data Sheet N0884, Rev. A SB10150 SCHOTTKY RECTIFIER DO-201AD Features  Schottky Barrier Chip  Guard Ring Die Construction

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Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features

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2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2.

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