SB101 Datasheet | Specifications & PDF Download

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features

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SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to ty

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www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power

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SB1020 thru SB10150 SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 TO 150 VOLTS CURRENT - 10 AMPERES TO-220AC FEATURES Schottky Barrier Chip Guard Ring Tran

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation volta

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® WON-TOP ELECTRONICS SB10150 – SB10200 10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring for Transient P

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SB10150 Technical Data Data Sheet N0884, Rev. A SB10150 SCHOTTKY RECTIFIER DO-201AD Features  Schottky Barrier Chip  Guard Ring Die Construction

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DATA SHEET SB1020F~SB10100F ISOLATION SCHOTTKY BARRIER RECTIFIERS VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere FEATURES .112(2.85) .100(2.55) ITO-2

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Schottky Barrier Rectifier Formosa MS SB1020FCT THRU SB10200FCT List List

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SavantIC Semiconductor www.DataSheet4U.com Product Specification www.DataSheet4U.com Silicon PNP Power Transistors 2SB1018 DESCRIPTION ·With TO-2

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2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2.

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Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

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Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

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www.DataSheet4U.com DATA SHEET SB1020FCT~SB10150FCT ISOLATION SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES .112(2.85) .100(2.55) .272(6.9) .248(6.3)

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www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Am

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DATA SHEET SEMICONDUCTOR SB1020CT~SB10200CT 10A SCHOTTKY BARRIER RECTIFIER FEATURES Schottky Barrier Chip Guard Ring for Transient Protection High

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www.DataSheet4U.com DATA SHEET SB1020F~SB10150F ISOLATION SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 150 Volts CURRENT 10 Amperes FEATURES .112(2.85)

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www.DataSheet4U.com DATA SHEET SB1020FCT~SB10150FCT ISOLATION SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES .112(2.85) .100(2.55) .272(6.9) .248(6.3)

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low

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UNISONIC TECHNOLOGIES CO., LTD SB10100 Preliminary 10A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC SB10100 is a Schottky Rectifier with high

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