SB53 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220C package ·Complement to type 2SD381 ·Low collector

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isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 50W(Max)@TC

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB531 DESCRIPTION ·With TO-3 package ·Complement t

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION ·With TO-220C package ·Complemen

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB537 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·Low Colle

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SavantIC Semiconductor wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power ampli

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB532 DESCRIPTION ·With TO-3 package ·High power d

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB539 DESCRIPTION ·With TO-3 package ·High power d

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SB520 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 60 Volt CURRENT 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB530 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -110V(Min) ·Low Colle

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High-precision SMD VC-TCXO / TCXO DSA535SC, DSB535SC/DSA535SD, DSB535SD ■ Features ●● 5032 size ●● Low phase noise ●● Single package structure ■ Appli

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High-precision SMD VC-TCXO / TCXO DSA535SC, DSB535SC/DSA535SD, DSB535SD ■ Features ●● 5032 size ●● Low phase noise ●● Single package structure ■ Appli

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SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal-Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current

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SANGDEST MICROELECTRONICS SB520 SB530 SB550 Technical Data Data Sheet N1708, Rev. - Green Products SB520/SB530/SB550 SCHOTTKY RECTIFIER Applicatio

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isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=

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Pb SB520 - SB560 5.0A SCHOTTKY BARRIER RECTIFIER Features  Epitaxial Construction  Guard Ring Die Construction for Transient Protection  Low Power

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