SB56 Datasheet | Specifications & PDF Download

® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 150A Peak  Low Power

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SB 520 SB 5100 Axial lead diode Schottky barrier rectifiers diodes SB 520 SB 5100 Forward Current: 5 A Reverse Voltage: 20 to 100 V Features 

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2SB560 TRANSISTOR (PNP) TO-92MOD FEATURES z High reverse voltage z Low saturation voltage z Suitable universal AF power amplifier use MAXIMUM RATIN

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2SB561 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD467 Outline RENESAS Package code: PRSS0003DA-A (

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2SB562 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline RENESAS Package code: PRSS0003DC-A (

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ST KSB564 PNP Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications. The transistor is subdivided into three group, O, Y an

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2SB562 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline RENESAS Package code: PRSS0003DC-A (

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2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD

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FSB560/FSB560A July 1998 FSB560 / FSB560A C E B SuperSOT -3 (SOT-23) TM NPN Low Saturation Transistor These devices are designed with high curre

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION ·With TO-220C package ·C

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FSB560/FSB560A July 1998 FSB560 / FSB560A C E B SuperSOT -3 (SOT-23) TM NPN Low Saturation Transistor These devices are designed with high curre

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KSB564A KSB564A Audio Frequency Power Amplifier • • • • Complement to KSD471A Collector Current : IC = -1A Collector Power Dissipation : PC = 800mW S

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2SB561(3CG561) PNP /SILICON PNP TRANSISTOR :。 Purpose: Low frequency power amplifier. : 2SD467(3DG467)。 Features: Complementary pair with 2SD467(3D

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DC COMPONENTS CO., LTD. R 2SB564A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KSB564A TRANSISTOR (PNP) FEATURES z Complement to KSD471A z

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isc Silicon PNP Power Transistor 2SB563 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector-Emitter Saturation Vo

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2SB562 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector

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2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD

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SB520 - SB5200 5.0 Amp. Schottky Barrier Rectifier DO-201AD (DO-27) Voltage 20 V to 200 V Current 5.0 A FEATURES • Low power losses, high efficie

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