SD205 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2058 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Lo

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Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/

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KSD2058 KSD2058 Low Frequency Power Amplifier 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2053 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPN package ·Wide area of

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2057 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High vo

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KSD2058 KSD2058 Low Frequency Power Amplifier 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC

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Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit: mm s Features q q 15.0± 0.3 11.0± 0.2 So

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2053 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Wide are

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Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 s Features q Satisfactory f

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Protection Device TVS (Transient Voltage Suppressor) ESD205-B1 Series Bi-directional, 5.5 V, 5 pF, 0201, 0402, RoHS and Halogen Free compliant ESD205-

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Collector Power Dissipation : PC= 25 W(Max)

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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage, High Speed ·Wide Area of Safe Operation ·Built-in Damper Diode ·Minimum Lot-to-Lot variat

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isc Silicon NPN Power Transistor DESCRIPTION ·High Current-Gain Bandwidth Product ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to T

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2055 DESCRIPTION ·High DC Current Gain - : hFE =20(Min)@ IC= 4A ·Collector-Emitter Sustai

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2051 DESCRIPTION ·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collector

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Power Transistors 2SD2051 Silicon NPN epitaxial planar type Darlington For low-frequency amplification 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2

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Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm q q q q q 16.2±0

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PRODUCT SPECIFICATION DATE: 04/22/14' cosmo SOLID STATE RELAY： ELECTRONICS CORPORATION KSD205AC3 NO. 58032205 REV. SHEET 1 OF 2 6 1. OUTSIDE DI

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2058 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Lo

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2052 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·Wide ar

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