SF23 Datasheet | Specifications & PDF Download

Main Product Characteristics: VDSS -20V RDS(on) 126mΩ (typ.) ID -2A SOT-23 Features and Benefits:  Advanced MOSFET process technology  Specia

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Main Product Characteristics: VDSS 20V RDS(on) 44mΩ(typ.) ID 3A SOT-23 Features and Benefits  Advanced MOSFET process technology  Special des

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BL GALAXY ELECTRICAL USF21 --- USF24 SUPER FAST RECTIFIER VOLTAGE RANGE: 50 --- 200 V CURRENT: 2.0 A FEATURES Low cost Low leakage Low forward vol

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE RANGE 50 to 200 Volts CURRENT 2.0 Amperes USF21 THRU USF2

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www.DataSheet4U.com SSF2336 DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with

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www.ti.com FEATURES • Single-Chip and Single-Supply Interface for Two IBM PC/AT Serial Ports • Meets or Exceeds the Requirements of TIA/EIA-232-F and

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SSF2307B DESCRIPTION The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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SSF2305 DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low

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SSF2300B www.DataSheet4U.com DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit

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SSF2301C www.DataSheet4U.com DESCRIPTION The SSF2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit

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www.DataSheet4U.com SSF2302 DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with

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SSF2306B www.DataSheet4U.com DESCRIPTION The SSF2306B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit

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SSF2316E www.DataSheet4U.com GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON)

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www.DataSheet4U.com SSF2334 DESCRIPTION The SSF2334 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with

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Preliminary SF2304B • • • • High Performance 175 MHz SAW Filter Hermetic 5 x 7 mm Surface-mount Case Single-ended or Differential Input Operation Comp

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SSF2305 20V P-Channel MOSFET DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with

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Main Product Characteristics SSF2320Y 20V N-Channel MOSFET D V(BR)DSS 20V D RDS(ON) ID 300mΩ 800mA S G SOT-523 Features and Benefits „ Advance

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GDSSF2336 DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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Main Product Characteristics: VDSS -20V RDS(on) 59mΩ(typ.) ID -2.6A SOT-23 Features and Benefits  Advanced MOSFET process technology  Special

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Main Product Characteristics: VDSS 20V RDS(on) 22mΩ(typ.) ID 3.3A Features and Benefits SOT-23  Advanced MOSFET process technology  Special

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