Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-B.
Vishay
SI1013CX - MOSFET
www.vishay.com Si1013CX Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.760 at VGS = -4.5 V -20 1.040 at VGS.
Vishay Siliconix
SI1013R - P-Channel MOSFET
P-Channel 1.8 V (G-S) MOSFET Si1013R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 .
Vishay Siliconix
SI1013X - P-Channel MOSFET
P-Channel 1.8 V (G-S) MOSFET Si1013R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 .
LRC
S-LSI1013LT1G - P-Channel 1.8-V (G-S) MOSFET
LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V (G-S) MOSFET LSI1013LT1G S-LSI1013LT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD.
Silicon Laboratories
SI1013 - Ultra Low Power ADC
Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati.
LRC
LSI1013LT1G - P-Channel 1.8-V (G-S) MOSFET
LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V (G-S) MOSFET LSI1013LT1G S-LSI1013LT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD.
LRC
S-LSI1013XT1G - P-Channel 1.8-V (G-S) MOSFET
P-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD .
LRC
LSI1013XT1G - P-Channel 1.8-V (G-S) MOSFET
P-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD .