SI2301B Datasheet | Specifications & PDF Download

P-Channel 2.5 V (G-S) MOSFET Si2301BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () - 20 0.100 at VGS = - 4.5 V 0.150 at VGS = - 2.5 V I

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Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.100 @ VGS = - 4.5 V 0.150 @ VGS = - 2.5 V ID (A)

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SI2301BDS P-Channel Enhancement Mode Field Effect Transistor FEATURES °
Super high dense cell design for low RDS(ON) °
Rugged and reliable °
Simple

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UMW R UMW SI2301B UMW SI2301B P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX -20 V 120 mΩ@-4.5V 150 mΩ@-2.5V ID 2.5 A SOT-23 1. GATE 2. SOURCE

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SI2301BDS-T1-GE3 www.VBsemi.com SI2301BDS-T1-GE3 P-Channel 20-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.035 at VGS = - 10

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SMD Type P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS

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