SI2301BDS

P-Channel Enhancement MOSFET

Kexin

* VDS (V) =-20V

* RDS(ON) ＜ 100mΩ (VGS =-4.5V)

* RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D

* Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃)

* 1 Ta=25℃ Ta=70℃ Pulsed Drain Current

* 2 Power Dissipatio

SI2301BDS

Kexin

1.68 MB

P-channel enhancement mosfet.

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SI2301BDS P-Channel Enhancement MOSFET Kexin

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