SI2301BDS
Kexin
1.68MB
P-channel enhancement mosfet.
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VDS (V)
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V(BR)DSS
RDS(on)MAX
-20 V
120 mΩ@-4.5V 150 mΩ@-2.5V
ID
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SOT-23
1. GATE 2. SOURCE.
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20V P-Channel Enhancement Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A
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Features Advanced trench pr.
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(YANGJING)
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FEATURE TrenchFET Power MOSFET
APPLIC.
SI2301 - P-Channel Enhancement Mode Field Effect Transistor
(MCC)
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Micro Commercial Components
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SI2301 - P-CHANNEL MOSFET
(BLUE ROCKET ELECTRONICS)
SI2301
Rev.E Mar.-2016
DATA SHEET
/ Descriptions SOT-23 P MOS 。P- CHANNEL MOSFET in a SOT-23 Plastic Package.
/ Features
,MOS 。 Trench FET Pow.
SI2301 - P-Channel MOSFET
(Kexin)
SMD Type
P-Channel Enhancement MOSFET SI2301 (KI2301)
MOSFET
■ Features
● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5.
