P-Channel 2.5 V (G-S) MOSFET Si2301BDS Vishay Sil.
SI2301BDS - P-Channel MOSFET
P-Channel 2.5 V (G-S) MOSFET Si2301BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () - 20 0.100 at VGS = - 4.5 V 0.150 at VGS = - 2.5 V I.SI2301BDS - P-Channel Enhancement Mode Field Effect Transistor
SI2301BDS P-Channel Enhancement Mode Field Effect Transistor FEATURES °Super high dense cell design for low RDS(ON) °Rugged and reliable °Simple .SI2301BDS-T1-GE3 - P-Channel MOSFET
SI2301BDS-T1-GE3 www.VBsemi.com SI2301BDS-T1-GE3 P-Channel 20-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.035 at VGS = - 10 .SI2301BDS - P-Channel Enhancement MOSFET
SMD Type P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) < 100mΩ (VGS =-4.5V) ● RDS(ON) < 150mΩ (VGS.