SK28 Datasheet | Specifications & PDF Download

2SK2873-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 15 mΩ typ

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2SK2806-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V

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2SK2848 External dimensions 1 FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 600 V VGSS ±30 V ID ±2 A * ID (

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2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2889 Chopper Regulator, DC−DC Converter and Motor Drive Applications

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2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0. 2 Ω

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2SK2803 External dimensions 1 FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 450 V VGSS ±30 V ID ±3 A * ID (

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2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications

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2SK2843 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2843 Chopper Regulator, DC−DC Converter and Motor Drive Applications z

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2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2866 Chopper Regulator, DC−DC Converter and Motor Drive Applications

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2SK2865 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) 2SK2865 Chopper Regulator, DC/DC Converter and Motor Drive Applications

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2SK2828 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary b

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2SK2872-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effec

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isc N-Channel MOSFET Transistor 2SK2803 FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Res

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2SK2804 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±5 ± 20 35 (Tc = 25ºC) 90 5 150 –55 to +15

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2SK2805 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 15 ± 60 80 (Tc = 25ºC) 550 15 150 –55 to

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2SK2807-01L,S FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment High Speed Switch Applications Analog Switch Applications •

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