SK315 Datasheet | Specifications & PDF Download

SANGDEST MICROELECTRONICS Technical Data Data Sheet N0946. Rev. - Applications: SK315 SCHOTTKY RECTIFIER • Switching power supply • Converters • Fr

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2SK3154 Silicon N Channel MOS FET High Speed Power Switching ADE-208-682A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ t

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2SK3155 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 100 mΩ typ. • High speed switching • 4 V gate drive de

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance

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2SK3151 Silicon N Channel MOS FET High Speed Power Switching ADE-208-747A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS (on) = 11.

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CYStech Electronics Corp. Spec. No. : C333SC Issued Date : 2011.01.07 Revised Date :2014.09.24 Page No. : 1/ 6 3.0Amp. Surface Mount Schottky Barrie

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Ordering number:EN1005B www.DataSheet4U.com N-Channel Junction Silicon FET 2SK315 FM Tuner Applications Features · Ideal for FM tuners in radios, s

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance

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2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C (Z) 4th. Edition Februaty 1999 Features • Low on-resistance R DS = 100 mΩ t

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0.126(3.20) 0.114(2.90) 0.103(2.62) 0.079(2.06) 0.060(1.52) 0.030(0.76) SK32C THRU SK3200C SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Vo

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2SK3151 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate dr

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2SK3157 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 50 mΩ typ. • High speed switching • 4 V gate drive dev

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2SK3157 Silicon N Channel MOS FET High Speed Power Switching ADE-208-769A (Z) 2nd. Edition Februaty 1999 Features • Low on-resistance R DS = 50 mΩ ty

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SK32A THRU SK320A 3A Surface Mount Schottky Barrier Rectifiers ■ Features • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK32A

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SK32B THRU SK320B 3A Surface Mount Schottky Barrier Rectifiers ■ Features • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK32B

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SK32B - SK315B 3 Amp. Surface Mount Schottky Barrier Rectifiers Pb CASE: Voltage Current SMB/DO-214AA 20 V to 150 V 3.0 A • For surface mount

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V

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2SK3152 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive dev

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GSDSK32A Series Surface Mount Schottky Barrier Rectifiers Product Description Reverse Voltage 20V to 200V Forward Current 3.0A Features  Ultra-high

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