SK89 Datasheet | Specifications & PDF Download

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isc N-Channel MOSFET Transistor 2SK893 FEATURES ·Drain Current : ID= 5.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-

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isc N-Channel MOSFET Transistor 2SK897-MR FEATURES ·Drain Current : ID= 4.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 550V(Min) ·Static Drain-Source On

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isc N-Channel MOSFET Transistor 2SK891 FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Minimum Lot-to-Lot variations f

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isc N-Channel MOSFET Transistor 2SK897-MR FEATURES ·Drain Current : ID= 4.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 550V(Min) ·Static Drain-Source On

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isc N-Channel MOSFET Transistor 2SK896 FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Res

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Free Datasheet http://www.Datasheet-PDF.com/ Free Datasheet http://www.Datasheet-PDF.com/

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isc N-Channel MOSFET Transistor 2SK895 FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot

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® WON-TOP ELECTRONICS SK82 – S810 8.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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