SM08 Datasheet | Specifications & PDF Download

() CRSM088N12N SkyMOS3 N-MOSFET 120V, 7.3mΩ, 60A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(on) • Excelle

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88 FFSM0865B Silicon Carbide (SiC) Schottky Diodes use a completely new techno

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PA 2.0mm (.079 ) pitch FAMILY SERIES/PA•PAF•PAL CONNECTOR Features –––––––––––––––––––––––– • Secure locking device The housing has a locking device

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ShenZhen Magnetic Cube Technology Co., LTD. TSM SERIES ® Part numbering system ◎ All test Data is referenced to 25℃ ambient. ◎ Operating tempera

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TSM085N03PQ33 30V N-Channel Power MOSFET PDFN33 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D1, Power88 FFSM0865A Description Silicon Carbide (SiC) Schottky Diodes use a completely

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() CRSM080N10N4 SkyMOS4 N-MOSFET 100V, 7mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excellen

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（） CRSM080N10L2 SkyMOS2 N-MOSFET 100V, 6.8mΩ, 71A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excell

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SESMXX 350 Wa TVS ARRAY DESCRIPTION The SESMXX series are transient voltage suppressor (TVS) arrays, designed for power or data line applica ons that

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Features ● Ultra low leakage: nA level ● Operating voltage: 8V ● Low clamping voltage ● Complies with following standards: – IEC 61000-4-2 (ESD) immun

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TSM080N03PQ56 30V N-Channel Power MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key

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www.DataSheet4U.com VSM0805 Vishay Foil Resistors SURFACE MOUNT Bulk Metal® Foil Technology Discrete Surface Mount Chip Resistors FEATURES • Nominal

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SM03 THRU SM36 STANDARD CAPACITANCE TVS ARRAY / ESD ARRAY FEATURES ● 350 watts peak pulse power (t p = 8/20µs) ● Transient protection for data & powe

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SiC Power Module BSM080D12P2C008 Application  Motor drive  Inverter, Converter  Photovoltaics, wind power generation.  Induction heating equipmen

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TSM080N03E Taiwan Semiconductor N-Channel Power MOSFET 30V, 55A, 8mΩ FEATURES ● Fast switching ● 100% EAS Guaranteed ● Green Device Available ● G-S

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IDC 1.0mm (.039 ) pitch m o SR CONNECTOR .c S e e h U 4 t Emboss Tape Disconnectable Insulation displacement connectors Features –––––––––––––––––

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IDC SR CONNECTOR Emboss Tape 1.0mm (.039 ) pitch Disconnectable Insulation displacement connectors Features –––––––––––––––––––––––– • Ultra-compa

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PA 2.0mm (.079 ) pitch FAMILY SERIES/PA•PAF•PAL CONNECTOR Features –––––––––––––––––––––––– • Secure locking device The housing has a locking device

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