SM9 Datasheet | Specifications & PDF Download

LMX2604 Triple-band VCO for GSM900/DCS1800/PCS1900 January 2004 LMX2604 Triple-band VCO for GSM900/DCS1800/PCS1900 General Description The LMX2604 i

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www.DataSheet4U.com TC59SM916/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 8,388,608-WORDS × 4BANKS

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www.DataSheet4U.com TC59SM916/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 8,388,608-WORDS × 4BANKS

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RSM957 subminiature signal relays 39 • Subminiature, monostable relays • Very small dimensions • DC coils - sensitive of up to 24 V DC, low coil pow

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RSM957N subminiature signal relays Contact data Number and type of contacts Contact material Rated / max. switching voltage AC Min. switching vo

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TSM9428 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 4.5V 40 @ VGS = 2.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Sou

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DUAL-BAND GSM850/PCS1900 TRANSMIT MODULE Package Style: Module 6.63mmx5.24mmx1.0mm www.DataSheet4U.com RF7167 TX ENABLE GPCTRL0 VRAMP GPCTRL1 V

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Features n Working voltage up to 1500 VDC n Hi-Pot: 6400 VDC n Developed for use with NXP model MC33771C series and ADI model LTC6804/681x series n De

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PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-208-685B (Z) 3rd Edition Apr. 1999 Application • Dual band

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SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics Description D2 D

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SSM9975M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics Description D2 D

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SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Low drive current Surface-mount package Description

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SSM9985GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low On-Resistance Fast Switching Speed Surface Mount Package D D D D DESCRIPTIO

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SSM9435K P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Low on-resistance Fast switching Description D SOT-223 S D G Advanced Po

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Preliminary 0 Typical Applications • 3V Quad-Band GSM Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment Product Descript

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SSM90T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION D

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SSM9980GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 80V 45mΩ 21A Pb-free; RoHS-compliant TO-251 (IPAK) and TO-25

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SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low Gate Charge Single Drive Requirement Surface Mount Package DESCRIPTION D2 D2 D

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SSM9972GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S The SSM9972GS is in a

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