SM9.1 Datasheet | Specifications & PDF Download

¤¥ÿÿÿÿÿÿÿÿÿÿÿ‹rÿÿŒsÿÿtŽuvÿÿ‘w’ÿÿÿ“ÿŽÿ”ÿÿÿÿ–ÿÿÿÿ—ÿÿÿÿÿÿÿÿÿÿÿ{˜ÿÿ|™}ÿÿ‚Š~ÿÿÿ„€šÿÿ€šÿÿ…‚ÿ‡„ÿÿÿˆ€ÿÿ~‰›ÿÿš€…ÿÿ‡ÿÿ†ÿÿÿÿÿÿÿÿÿ€ÿÿ‡ÿÿÿÿÿÿˆÿÿÿÿÿ‰ÿÿÿ

(268 views)

SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9435GM acheives fast switching performance wit

(18 views)

SM9A01NSF/SM9A01NSFP ® N-Channel Enhancement Mode MOSFET Features · 900V/12A, RDS(ON)= 0.48W(max.) @ VGS= 10V · Reliable and Rugged · Avalanche Rat

(12 views)

PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-208-685B (Z) 3rd Edition Apr. 1999 Application • Dual band

(11 views)

RF7188 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE Package Style: Module (6mmx5.93mmx1mm) GND VBATT VBATT GND GND GND Features  High Power and High Ef

(11 views)

Elektronische Bauelemente SSM9575 -4A , -60V , RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifi

(11 views)

(10 views)

E2F0016-19-43 ¡ Semiconductor ¡ Semiconductor MSM9225 CAN (Controller Area Network) Controller el im This This version: version: Aug. Apr. 1998 1999

(10 views)

PEDL9201-03 ¡ Semiconductor PEDL9201-03 This version: Sep. 2000 MSM9201-01 Previous version: Nov. 1997 el Pr im in ¡ Semiconductor MSM9201-01 Fluore

(10 views)

E2B0014-27-Y2 ¡ Semiconductor MSM9004-01/02 ¡ Semiconductor This version: Nov. 1997 MSM9004-01/02 Previous version: Mar. 1996 1/3, 1/4 DUTY LCD DRI

(10 views)

www.DataSheet4U.com SSM9960M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characterist

(10 views)

TSM9117-TSM9120 1.6V Nanopower Comparators with/without Internal References FEATURES ♦ Second-source for MAX9117-MAX9120 ♦ Guaranteed to Operate Down

(10 views)

TSM9428 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 4.5V 40 @ VGS = 2.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Sou

(9 views)

TSM9117-TSM9120 1.6V Nanopower Comparators with/without Internal References FEATURES ♦ Second-source for MAX9117-MAX9120 ♦ Guaranteed to Operate Down

(9 views)

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SM6.8 THRU SM200CA Breakdown Voltage Peak Pulse Power 6.8 to 200 Volts 400 Watts FEATURES • Plastic pac

(9 views)

AEC-Q20*0 RCoOHSM PaLnIdANT Features n Two channels with choke n Supports serial daisy chain / IsoSPI n DNHeXovlPdic’sser’MsefCMe3r(oe031.

(9 views)

u:»~ I .L IU SERIES OSM9210SERIES II OSS 9210 SERIES HIGH VOLTAGE RECTIFIER STACKS The OSB9210, OSM9210 and OSS9210series are ranges of high vo

(9 views)

SSM9987GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low Gate Charge Single Drive Requirement Fast Switching Performance DESCRIPTION D

(8 views)

MOSEL VITELIC October 1996 Features To emulate S1207 chip and its derivatives, see data sheet PID 247. Driven by either 1.5 V x 4 battery or 5 - 6 V p

(8 views)

TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 900 1.4 @ VGS =10V

(8 views)