SMA12 Datasheet | Specifications & PDF Download

P6sma Series TVS TECHNOLOGIES Co.,Ltd. P6SMA Series Breakdown Voltage: 6.8 to 220 V Surface Mount Peak Pulse Power: 600 W Transient Voltage S

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P6SMA***A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR 600 Watt Peak Pulse Power FEATURES * Plastic package has Underwriters Laboratory Flammability

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P6SMA***A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR 600 Watt Peak Pulse Power FEATURES * Plastic package has Underwriters Laboratory Flammability

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P6sma Series TVS TECHNOLOGIES Co.,Ltd. P6SMA Series Breakdown Voltage: 6.8 to 220 V Surface Mount Peak Pulse Power: 600 W Transient Voltage S

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P6SMA***A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR 600 Watt Peak Pulse Power FEATURES * Plastic package has Underwriters Laboratory Flammability

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P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fa

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P6sma Series TVS TECHNOLOGIES Co.,Ltd. P6SMA Series Breakdown Voltage: 6.8 to 220 V Surface Mount Peak Pulse Power: 600 W Transient Voltage S

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P6SMA***A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR 600 Watt Peak Pulse Power FEATURES * Plastic package has Underwriters Laboratory Flammability

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P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fa

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P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fa

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MSC180SMA120B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the

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P4SMA SERIIES VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Fa

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1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120B Product Overview 1200V, 80 mΩ typical at 20 VGS, Silicon Carbide (SiC) N-Channel MOSFET, TO-247. Fe

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MSC040SMA120B Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increase

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1200V, 25 mΩ N-Channel mSiC™ MOSFET MSC025SMA120B Product Overview 1200V, 25 mΩ typical at VGS = 20V, 28 mΩ typical at VGS = 18V, Silicon Carbide (Si

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1SMA5.0A(CA) - 1SMA440A(CA) SURFACE MOUNT TRANSIENT VOLAGE SUPPESSOR DIODE VOLTAGE RANGE: 5.0 - 440 V POWER: 400Wa t t s Features Glass Passivated

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1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120B4 Product Overview 1200V, 80 mΩ typical at VGS = 20V, 90 mΩ typical at VGS = 18V, Silicon Carbide (S

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MSC360SMA120S 1200 V, 360 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases

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1200V, 17 mΩ N-Channel mSiC™ MOSFET MSC017SMA120B Product Overview 1200V, 17 mΩ typical at 20 VGS, 19 mΩ typical at 18 VGS, Silicon Carbide (SiC) N-Ch

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1SMA5.0A(CA) - 1SMA440A(CA) SURFACE MOUNT TRANSIENT VOLAGE SUPPESSOR DIODE VOLTAGE RANGE: 5.0 - 440 V POWER: 400Wa t t s Features Glass Passivated

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