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SSS8205 - Dual N-Channel MOSFET
SSS8205 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) 18V ID (A) 5A RDS(ON) (m ) Max 25 @VGS = 4.5V 45 @VGS = 2.5V D1 (2, 5) 1 TSO.SSD2030N - N-Channel MOSFET
SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 10V 30V 20A 55 @VGS = 4.5V G S D TO-252 D FEAT.VT8237 - South Bridge
Data Sheet VT8237 South Bridge Revision 1.25 April 26, 2004 VIA TECHNOLOGIES, INC. Copyright Notice: Copyright © 2002 - 2004 VIA Technologies Incorpo.SSS2301A - P-Channel MOSFET
SSS2301A P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -20V SOT-23 D ID (A) -2.3A RDS(ON) (mΩ) Max 130 @VGS = -4.5V G 190 @VGS = -2.5V.SC8922 - Synchronous Boost Charger
SOUTHCHIP SEMICONDUCTOR SC8922 PRELIMINARY DATASHEET INTERNAL USE CONFIDENTIAL, SUBJECT TO CHANGE High Efficiency, Synchronous Boost Charger for Two.SC8802 - Bi-directional Buck-Boost Charger
SOUTHCHIP SEMICONDUCTOR SC8802 DATASHEET SOUTHCHIP CONFIDENTIAL SC8802 High Efficiency, Synchronous, Bi-directional Buck-Boost Charger 1 Descriptio.SDP30S120 - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior.SDB05S120 - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior.SJEP120R063 - Normally-OFF Trench Silicon Carbide Power JFET
PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Pos.VT82C686B - Super South / South Bridge
9,$ 7HFKQRORJLHV 'HOLYHULQJ 9DOXH 97 & % ¦6XSHU6RXWK§6RXWK%ULGJH 36,3& 3&,6XSHU ,2,QWHJUDWHG3HULSKHUDO&RQWUROOHU 3& &203/,$173&, 72 ,6$.SSS2302 - N-Channel MOSFET
SSS2302 N-Channel Enhancement Mode MOSFET Product Summary VDS (V) 20V SOT-23 D ID (A) 2.4A RDS(ON) (m ) Max 60 @VGS = 4.5V G 115 @VGS = 2.5V S D.SSS2308 - N-Channel MOSFET
SSS2308 N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D SOT-23 80 @VGS = 4.5V 20V 2.3A 110 @VGS = 2.5V G S D F.SSS2321 - P-Channel MOSFET
SSS2321 P-Channel Enhancement Mode MOSFET SOT-23 D Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 60 @VGS = -4.5V G 21 23 YW -20V -3.4A 80 @VGS.SSS2323 - P-Channel MOSFET
SSS2323 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) 35 @VGS = -4.5V -20V -4A 55 @VGS = -2.5V 100 @VGS = -1.8V G S D SOT-.SSD3030P - P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 25 @VGS = -10V -30V -30A 45 @VGS = -5V 55 @VGS = -4.5V G S D SSD303.SC89890H - Synchronous 5A Buck Charger
SOUTHCHIP SEMICONDUCTOR SC89890H DATASHEET High Efficiency, Synchronous 5A Buck Charger for 1 cell Li-ion Battery with NVDC Power Path Management 1.SC8723 - 3.5A Buck-Boost Converter
SOUTHCHIP SEMICONDUCTOR SC8723 PRELIMINARY SPEC SOUTHCHIP CONFIDENTIAL, SUBJECT TO CHANGE SC8723 High Efficiency, Synchronous, 3.5A Buck-Boost Conve.SC89171 - Synchronous Buck Charger
SOUTHCHIP SEMICONDUCTOR SC89171 DATASHEET DRAFT SOUTCHCHIP CONFIDENTIAL, SUBJECT TO CHANGE High Efficiency, Synchronous Buck Charger for 1-4 cell Li.SC2151A - Type-C PD and DPDM Fast Charge Controller
SOUTHCHIP SEMICONDUCTOR SC2151A DATASHEET DRAFT SOUTHCHIP CONFIDENTIAL, SUBJECT TO CHANGE SC2151A Type-C/ PD and DPDM Fast Charge Controller with CC.SC8906 - Buck-Boost Charger Converter
SOUTHCHIP SEMICONDUCTOR SC8906 DATASHEET DRAFT SOUTHCHIP CONFIDENTIAL, SUBJECT TO CHANGE SC8906 High Efficiency, Synchronous, Buck-Boost Charger Con.