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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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Silan Microelectronics SVSP14N60F(FJD)(T)D2_Datasheet 14A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N60F(FJD)(T)D2 is an N-channe

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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Data Sheet December 1999 CSP1027 Voice Band Codec for Cellular Handset and Modem Applications 1 Features s ∆-Σ (delta-sigma) A/D and D/A converters

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SP1060 Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free VOLTAGE 60V 10 .0AMP Schottky Barrier Rectifie

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DSP DSP RELAYS 1a 8A, 1a1b/2a 5A small polarized power relays RoHS compliant FEATURES 1. Compact with high contact rating Even with small 10 mm .394

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General Description The WSP14N10 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate

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PDSP16318/16318A PDSP16318/PDSP16318A Complex Accumulator Advance Information Supersedes version DS3708 - 2.4 September 1996 DS3708 - 3.1 November 19

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Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS™ transistor FEATURES • ’Trench’ technology • Low on-state resistan

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MSP10065V1 MSP10065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

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Switching Power Supplies ESP Series Features Compact boxed Power Supplies with Screw Terminal Block Single, Dual and Triple Output Models Universal In

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KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=625mW 1 TO-92 1. Emitter 2.

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Features Clamping CSPrhuoortgkeeecstor • Surge protector (voltage clamp) for RIA12 and NF F01-510 transients • bOultlpeut tpfooilnlotsw(sPrinopdu

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SP1020~SP10150 ISOLATION SCHOTTKY BARRIER RECTIFIERS UPM Features Voltage Range 20 to 150 Volts Current 10 Amperes ITO-220AC 10 0.5 0.2 3.2 0.1 4.5

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ALUMINUM ELECTROLYTIC CAPACITORS SP 7mmL, Bi-Polarized series Bi-polarized series with 7mm height. Extended capacitance range by an addition of φ8 pr

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Chip tantalum capacitors (New bottom surface electrode type : Extra large capacitance) TCS series P case Datasheet ●Features 1) New bottom electrode

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Silan Microelectronics SVSP11N65D/F/S/FJD/K/TD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2 is an N

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Silan Microelectronics SVSP11N65D/F/S/FJD/K/TD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2 is an N

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