SP230 Datasheet | Specifications & PDF Download

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MSP2305A -12V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS

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Data LOW CAPACITANCE THYRISTOR SERIES CAPACITANCE THYRISTOR SERIES MECHANICAL DIMENSION DESCRIPTION 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (

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Data LOW CAPACITANCE THYRISTOR SERIES CAPACITANCE THYRISTOR SERIES MECHANICAL DIMENSION DESCRIPTION 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (

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Data LOW CAPACITANCE THYRISTOR SERIES CAPACITANCE THYRISTOR SERIES MECHANICAL DIMENSION DESCRIPTION 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (

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Data LOW CAPACITANCE THYRISTOR SERIES CAPACITANCE THYRISTOR SERIES MECHANICAL DIMENSION DESCRIPTION 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (

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MSP2305 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-

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MSP2301 -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=

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MSP2301B -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VG

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MSP2303 -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -2.0A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS

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DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 F

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SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 Voss 450 V Ros(on) 30 10 2.5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH

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FCSP230LTR Vishay High Power Products FlipKY®, 1.5 A Chip Scale Package Schottky Barrier Rectifier FEATURES • Ultra low VF per footprint area • Low l

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DESCRIPTION MECHANICAL DIMENSION 7.6 / 5.8 25.4MIN 3.6 / 2.6 DIA. 0.9 / 0.7 DIA. DO-15 FEATURES ¡¼ ¡¼ ¡¼ ¡¼ UL94V-0 Flammability Classification ,

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