SS120 Datasheet | Specifications & PDF Download

ESF30SS120S Dec. 2015 14 ESF30SS120S 24 ESF30SS120S 34 ESF30SS120S 44

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1SS120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-167B (Z) Rev. 2 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short

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RSS120N03 Transistors Switching (30V, 12A) RSS120N03 zFeatures 1) Low on-resistance. www.DataSheet4U.com 2) Built-in G-S Protection Diode. 3) Small a

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ESF8SS120S/C Fast Recovery Diode Features  Repetitive Reverse Voltage : VRRM = 1200V  Forward Voltage Drop : VF(typ.) = 3.2V  Average Forward Curre

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DSS12U THRU DSS125U Technical Data Data Sheet N1873, Rev. A DSS12U THRU DSS125U SINGLE PHASE 1.0AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SOD-123F

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CSS/CSSH Series Ultra Precision Current Sensing Chip Resistor Stackpole Electronics, Inc. Resistive Product Solutions Features: • High power metal a

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CSS/CSSH Series Ultra Precision Current Sensing Chip Resistor Stackpole Electronics, Inc. Resistive Product Solutions Features: • High power metal a

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UNISONIC TECHNOLOGIES CO., LTD USS120 Preliminary AC LINE SWITCH  DESCRIPTION The UTC USS120 high performance switch circuit is able to control a

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www.eicsemi.com 1SS120 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V

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ESF8SS120S/C Fast Recovery Diode Features  Repetitive Reverse Voltage : VRRM = 1200V  Forward Voltage Drop : VF(typ.) = 3.2V  Average Forward Curre

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SMD Type Schottky Barrier Diodes SS12F ~ SS120F TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ For surface mo

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SS12F THRU SS120F SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Reverse Voltage - 20 to 200 V Forward Current - 1 A Features • Metal silicon junction, ma

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MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 3 / 6 / 9 / 12 / 15 / 18 VOICE ROM September 1996 Features Single power supply can opera

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MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 3 / 6 / 9 / 12 / 15 / 18 VOICE ROM September 1996 Features Single power supply can opera

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SS12F~SS120F Rev.C Feb.-2015 DATA SHEET / Descriptions ，：20~200V，：1.0A， SMAF 。 Surface Mount Schottky Barrier Rectifier, Reverse Voltage：20 to 200

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Main Product Characteristics VDSS 120V RDS(on) 4mΩ (typ.) ID 180A ① Features and Benefits TO-220  Advanced Process Technology  Special designe

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R SEMICONDUCTOR SS12T THRU SS120T SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere FEATURES Pl

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Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0 A FEATURES • Metal silicon junc

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R FEATURES Low Power Loss High Efficiency Ideal For Automated Placement Guard Ring For Over-voltage Protection High Surge Current Capability MECHANICAL

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