SS13-L Datasheet | Specifications & PDF Download

Public BSS131I Final datasheet Small‑Signal Power‑Transistor Features • N‑channel • Enhancement mode • Logic level • Pb‑free lead plating; RoHS comp

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Public BSS138I Final datasheet Small‑Signal Transistor Features • N‑channel • Enhancement mode • Logic level • dv/dt rated • Pb‑free lead‑plating; R

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Public BSS139I Final datasheet Small‑Signal Transistor Features • N‑channel • Depletion mode • dv/dt rated • Halogen free according to IEC61249‑2‑21

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BSS138Q-7-F-VB BSS138Q-7-F-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID

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http://www.ncepower.com Pb Free Product BSS138K NCE N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @

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BSS138-NL-VB BSS138-NL-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA

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1SS133 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Fre

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1SS133 Silicon Epitaxial Planar Switching Diode Features • Glass sealed envelope • High speed • High reliability Applications • High-speed switching A

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May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect tran

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Analog Power N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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www.DataSheet4U.com 1SS133 Diodes Switching diode 1SS133 Applications High speed switching External dimensions (Units : mm) CATHODE BAND (YELLOW)

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www.DataSheet4U.com 1SS130 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max.

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Features: •  Low On-Resisrance •  Low Gate Threshold Voltage •  Low Input Capacitance

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CYStech Electronics Corp. 50V N-CHANNEL Enhancement Mode MOSFET Spec. No. : C834C3 Issued Date : 2012.06.25 Revised Date : Page No. : 1/8 BSS138C3 F

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1SS133 Diodes Switching diode 1SS133 Applications High speed switching External dimensions (Units : mm) CATHODE BAND (YELLOW) φ0.4±0.1 Features 1

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138K Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacit

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N - Channel 50-V (D-S) MOSFET MESS138W/MESS138W-G GENERAL DESCRIPTION The MESS138W is the N-Channel logic enhancement mode power field effect transi

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BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor May 2013 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transis

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www.DataSheet4U.com 1SS132 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max.

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