SS36 Datasheet | Specifications & PDF Download

NEW PRODUCT Features • Fast Switching Speed • Ultra-Small Leadless Surface Mount Package (1.0 x 0.6mm) • Ultra-Low Profile Package (0.4mm) • Low Forw

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® WON-TOP ELECTRONICS SS32 – SS310 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package  Low forwa

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Ordering number :EN4562A 1SS365 Schottky Barrier Diode VHF, UHF Detector and Mixer Applications Features · Small-sized package facilitates high-dens

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 1SS360 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package  L

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NEW PRODUCT 1SS361LP3 ULTRA-SMALL LEADLESS SURFACE MOUNT SWITCHING DIODE Features  Ultra-Small Leadless Surface Mount Package (0.6 x 0.3mm)  Ultra

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications 1SS360F Unit in mm l Small package : 1608 Flat lead l

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High Sensitivity Latching Digital Hall-effect Sensor ICs: 32312441 SS360NT, SS360ST, SS360ST-10K, SS460S, SS460S-T2, SS460S-T3 Issue F SS460S-LP F

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SS3613 CMOS Omnipolar High Sensitivity Micropower Hall Switch Features − Micropower consumption for battery powered applications − Omnipolar, output s

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361CT Ultra High Speed Switching Application z Small package z Low forward voltage: VF (3) = 0.9 V (

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1SS368 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application Features • Small package • Low forward voltage: VF=0.98V (typ.) • Fast re

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LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode FEATURES z We declare that the material of product compliance with RoHS re

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0.5± 0. 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications  AEC-Q101 qualified (Note 1)  Small packag

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0.5± 0. 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications  AEC-Q101 qualified (Note 1)  Small packag

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage:

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ADVANCE INFORMATION Features • Fast Switching Speed • Ultra-Small Surface Mount Package (1.0 x 0.8mm) • Ultra-Low Profile Package (0.45mm) • Low Forw

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1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm  Small package  Low forward voltage

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Ordering number :EN4563A 1SS366 Schottky Barrier Diode VHF, UHF Detector and Mixer Applications Features · Series connection of 2 elements in a very

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SS32A-SS3100A Surface Mount Schottky Barrier Rectifiers REVERSE VOLTAGE: 20 - 100 V Features • Guarding protection • Low forward voltage • Reverse ene

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Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 3.0A FEATURES • Metal silicon juncti

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