STB34NM60N Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=29A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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STB34NM60N, STP34NM60N N-channel 600 V, 0.092 Ω, 31.5 A MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages Datasheet - production data Features T

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STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, T

Rating: 1 ★ (1 votes)