STM-64 Datasheet | Specifications & PDF Download

  PDIP8 (BN) TSSOP8 (DW) 169 mil width SO8 (MN) 150 mil width UFDFPN8 (MC) DFN8 - 2x3 mm UFDFPN5 (MH) DFN5 -1.7x1.4 mm WLCSP (CS) Thin WLCSP (

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Product status link M54HCxxx, M54HCTxxx M54HCxxx, M54HCTxxx Datasheet Rad-hard high speed 2 to 6 V CMOS logic series Features • ESCC qualified • 7 V

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LED1642GW 16 channel LED driver with error detection current gain control and 12/16-bit PWM brightness control Datasheet - production data QSOP-24

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ST93CS46 ST93CS47 1K (64 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGR

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L4964 HIGH CURRENT SWITCHING REGULATOR . . . . . . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 28 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRE

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M24164 16 Kbit Serial I2C BUS EEPROM PRELIMINARY DATA TWO WIRE I2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DA

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M28C64 64 Kbit (8K x 8) Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN s Fast Access Time: – 90 ns at VCC=5 V for M28C64 and M28C64

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M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLE

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M28LV64 64K (8K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUM

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FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional

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FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional

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M27C64A 64 Kbit (8Kb x 8) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 150ns LOW POWER “CMOS” CONSUMPTION: – Act

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M27V512 512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION:

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M54HC164 M74HC164 8 BIT SIPO SHIFT REGISTER . . . . . . . . HIGH SPEED tPD = 15 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA

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® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0

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M48T59 M48T59Y/M48T59V 64 Kbit (8Kb x8) TIMEKEEPER® SRAM PRELIMINARY DATA s INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIR

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NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES

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www.DataSheet4U.com STM1645-10 RF POWER MODULES SATELLITE COMMUNICATIONS APPLICATIONS . . . . . . PRELIMINARY DATA SATELLITE COMMUNICATIONS AMPLIF

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www.DataSheet4U.com ® STM1645-30 RF POWER MODULE SATELLITE COMMUNICATION APPLICATIONS s s s s s s CLASS C SATELLITE COMMUNICATIONS AMPLIFIER 1625

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ST24E64 ST25E64 SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 64K (8K x 8) EEPROM PRELIMINARY DATA COMPATIBLE with I2C EXTENDED ADDRESSING TWO W

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