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POWER MOSFET Features  80V,80A N-Channel MOSFET  RDS(on)(typ.)=6.5mΩ@VGS=10V  High ruggedness  Fast switching  100% avalanche tested  Exceptiona

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SD75120H（TO247-2L） 1200V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE （FRED） Features  Planar passivated chips  Very short recovery time  Ex

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SD6030AD（TO3P） 300V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE （FRED） Features  Planar epitaxial chips  Using high temperature Pt diffusion

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POWER MOSFET Features  150V,80A N-Channel MOSFET  RDS(on)(typ.)=17mΩ@VGS=10V  High ruggedness  Fast switching  100% avalanche tested  Exceptiona

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SD8040AD（TO3P） 400V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE （FRED） Features  Planar epitaxial chips  Using high temperature Pt diffusion

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POWER MOSFET Features  70V,80A N-Channel MOSFET  RDS(on)(typ.)=4.8mΩ@VGS=10V  High ruggedness  Fast switching  100% avalanche tested  Exceptiona

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SD3060AD（TO3P） 600V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE （FRED） Features  Planar passivated chips  Very short recovery time  Extreme

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POWER MOSFET Features  60V,50A N-Channel MOSFET  RDS(on)(typ.)=6mΩ@VGS=10V  High ruggedness  Fast switching  100% avalanche tested  Exceptional

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POWER MOSFET Features  500V,24A N-Channel MOSFET  RDS(on)(typ.)=0.18Ω@VGS=10V  High ruggedness  Fast switching  100% avalanche tested  Exception

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