.
SD8040AD - FAST RECOVER EPITAXIAL DIODE
SD8040AD(TO3P) 400V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE (FRED) Features Planar epitaxial chips Using high temperature Pt diffusion.SF80N80 - POWER MOSFET
POWER MOSFET Features 80V,80A N-Channel MOSFET RDS(on)(typ.)=6.5mΩ@VGS=10V High ruggedness Fast switching 100% avalanche tested Exceptiona.SF80N150P - POWER MOSFET
POWER MOSFET Features 150V,80A N-Channel MOSFET RDS(on)(typ.)=17mΩ@VGS=10V High ruggedness Fast switching 100% avalanche tested Exceptiona.SD75120H - FAST RECOVER EPITAXIAL DIODE
SD75120H(TO247-2L) 1200V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE (FRED) Features Planar passivated chips Very short recovery time Ex.SD6030AD - FAST RECOVER EPITAXIAL DIODE
SD6030AD(TO3P) 300V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE (FRED) Features Planar epitaxial chips Using high temperature Pt diffusion.SD3060AD - FAST RECOVER EPITAXIAL DIODE
SD3060AD(TO3P) 600V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE (FRED) Features Planar passivated chips Very short recovery time Extreme.SF24N50A - POWER MOSFET
POWER MOSFET Features 500V,24A N-Channel MOSFET RDS(on)(typ.)=0.18Ω@VGS=10V High ruggedness Fast switching 100% avalanche tested Exception.SF50N06 - POWER MOSFET
POWER MOSFET Features 60V,50A N-Channel MOSFET RDS(on)(typ.)=6mΩ@VGS=10V High ruggedness Fast switching 100% avalanche tested Exceptional .SF80N70 - POWER MOSFET
POWER MOSFET Features 70V,80A N-Channel MOSFET RDS(on)(typ.)=4.8mΩ@VGS=10V High ruggedness Fast switching 100% avalanche tested Exceptiona.