Si-Schottky Datasheet | Specifications & PDF Download

R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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www.DataSheet4U.com Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Car

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N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di

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DATA SHEET SR302 SERIES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE 20~150 Volts CURRENT 3.0 Ampere FEATURES z EXTREMELY LOW VF z UL 94V0 FLAME R

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R SCHOTTKY BARRIER DIODE HBR2200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 2A 200 V 175 ℃ 0.72V （@Tj=125℃）  、  APPLICATIONS

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R SCHOTTKY BARRIER DIODE HBR3150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 150 V 175 ℃ 0.76V （@Tj=125℃）  、  APPLICATIONS

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Certificate TH97/10561QM Certificate TW00/17276EM BAT54/54A/54C/54S PRV : 30 Volts Io : 200 mA FEATURES : * These diodes feature very low turn-on vo

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1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junctio

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PSC20120J 1200 V, 20 A SiC Schottky diode in D2PAK R2P 30 April 2025 Product data sheet 1. General description Nexperia introduces leading edge Si

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

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R TRENCH SCHOTTKY BARRIER DIODE TPA4050S-2 MAIN CHARACTERISTICS IF(AV) VRRM TJmax IFSM VF(max)@20A 40A 50 V 200 ℃ 450 A 0.46V （@Tj=125℃） Pac

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ESIC04065S Silicon carbide power schottky diode TO-220AC Features ‧Rated to 650V at 4 Amps ‧Zero reverse recovery current ‧Zero forward recovery vol

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2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per

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ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D50065H Silicon Carbide Schottky Barrier Diode Features Applications VRRM=650V IF(TC=135℃ )=5

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650V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆650V Schottky rectifier ◆Zero reverse recovery current/voltage ◆High frequency operation ◆Swi

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www.DataSheet.co.kr BAT54-V, BAT54A-V, BAT54C-V, BAT54S-V Vishay Semiconductors Small Signal Schottky Diodes, Single and Dual Features • These diode

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R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

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