Si-Schottky Datasheet | Specifications & PDF Download

R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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2.4 ±0.2 1.3±0.1 ELV BAS70, BAS70-04, BAS70-05, BAS70-06 BAS70, BAS70-04, BAS70-05, BAS70-06 SMD Small Signal Schottky Diodes SMD Kleinsignal-Schott

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N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di

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® BAT54J / W / AW / CW / SW SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD V

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www.vishay.com BAT46W-G Vishay Semiconductors Small Signal Schottky Diode DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICA

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DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages Applications  Micro

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1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junctio

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www.DataSheet.co.kr BAT54-V, BAT54A-V, BAT54C-V, BAT54S-V Vishay Semiconductors Small Signal Schottky Diodes, Single and Dual Features • These diode

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R TRENCH SCHOTTKY BARRIER DIODE TPA4050S-2 MAIN CHARACTERISTICS IF(AV) VRRM TJmax IFSM VF(max)@20A 40A 50 V 200 ℃ 450 A 0.46V （@Tj=125℃） Pac

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2.4 ±0.2 1.3±0.1 ELV BAT54, BAT54A, BAT54C, BAT54S BAT54, BAT54A, BAT54C, BAT54S SMD Small Signal Schottky Diodes SMD Kleinsignal-Schottky-Dioden V

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CVFD20065A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package • 650-Volt Schottky Rectifier • • Reduced VF for Improved Efficien

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Silicon Schottky Diodes q q q q BAT 15- … 4 Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40

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2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per

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HIGH SENSITIVITY ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 26.5 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR • 3 dB More Sens

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R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

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Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discha

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Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure • Pb-free (RoHS

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BAT 45 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications.

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