Si-Schottky Datasheet | Specifications & PDF Download

R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

Rating: 1 ★ (10 votes)

R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L FFSH15120A Description Silicon Carbide (SiC) Schottky Diodes use a comple

Rating: 1 ★ (8 votes)

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D1, D2PAK-2L FFSB0665A Description Silicon Carbide (SiC) Schottky Diodes use a completely

Rating: 1 ★ (8 votes)

1SS199 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-299A (Z) Rev. 1 Features • Detection efficiency is very good

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FFSP0665A — Silicon Carbide Schottky Diode www.onsemi.com FFSP0665A Silicon Carbide Schottky Diode 650 V, 6 A Features • Max Junction Temperature 17

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www.vishay.com BAT54, BAT54A, BAT54C, BAT54S Vishay Semiconductors Small Signal Schottky Diodes, Single and Dual BAT54 3 Top view BAT54A 3 FEATU

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD101/D Schottky Barrier Diodes • Low Noise Figure — 6.0 dB Typ @ 1.0 GHz Designed p

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1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features • Detection efficiency is very good. • Small temperature coe

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www.DataSheet4U.com Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Car

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STPSC1006 600 V power Schottky silicon carbide diode Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ P

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10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech

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SBD20C100T/F_Datasheet 20A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD20C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

Rating: 1 ★ (7 votes)

R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

Rating: 1 ★ (7 votes)

R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

Rating: 1 ★ (7 votes)

R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT

Rating: 1 ★ (7 votes)

R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT

Rating: 1 ★ (7 votes)