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PSC20120J - 1200V 20A SiC Schottky diode

PSC20120J Description

PSC20120J 1200 V, 20 A SiC Schottky diode in D2PAK R2P 30 April 2025 Product data sheet 1.General .
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applicati.

PSC20120J Features

* Zero forward and reverse recovery
* Temperature independent fast and smooth switching performance
* Outstanding figure of merit (Qc x VF)
* High IFSM capability
* High power density
* Reduced system costs
* System miniaturization
* Re

PSC20120J Applications

* The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diod

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1200V 20A SiC Schottky diode nexperia
nexperia PSC20120J-like datasheet