Sino Datasheet | Specifications & PDF Download

www.DataSheet4U.com SH69P25 PRELIMINARY Features „ „ „ „ „ „ „ „ „ „ SH6610C-based single-chip 4-bit micro-controller OTPROM: 4096 X 16 bits RAM: 160

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N R N-CHANNEL MOSFET JCS9N50F MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 8A 500 V 0.8 Ω 59 nC APPLICATIO

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SH69P24 Preliminary SH6610D, 4 OTP ROM: 4K X 16 RAM:322X 4 - 50 - 256 - 16 LCD : - fOSC = 4MHz, VDD = 2.4V - 5.5V 22 I/O PORTA - PORTF 8

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NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application

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R SCHOTTKY BARRIER DIODE HBR16200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 16（2×8）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max

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SM4508NHKP ® N-Channel Enhancement Mode MOSFET Features Pin Description · 30V/48A, RDS(ON)=6.8mW (Max.) @ VGS=10V RDS(ON)=11mW (Max.) @ VGS=4.5V ·

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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R SCHOTTKY BARRIER DIODE HBR10150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃） z z APPLICATI

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SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge

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SM4377NSKP Features • 30V/50A, RDS(ON)= 7mΩ (max.) @ VGS=10V RDS(ON)= 9.6mΩ (max.) @ VGS=4.5V • Provide Excellent Qgd x Rds-on • 100% UIS + R Tes

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LCD Module Specification Version: A0 SCT028002-V03 SPECIFICATIONS FOR LCD MODULE CUSTOMER MODEL CUSTOMER APPROVED SCT028002-V03 APPROVED BY CHEC

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MC5833 V0.1 LED 2014/3/20 Shanghai SinoMCU Microelectronics Co., Ltd. MC5833 LED ， 85V～265V LED MC5833 、， ±3%， ， ， MC5833 500V MOSFET， ，

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SH79F1611 ADCPWM8051 1.  80518  16 X 16bit  832 / 16bit  132bit  Flash ROM：16K  RAM：1.5K  ： fOSC = 400k - 27MHz，VDD = 2.4V - 5.5V  （）： - ：4

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R SCHOTTKY BARRIER DIODE HBR16200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 16（2×8）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI

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R SCHOTTKY BARRIER DIODE SBL2060 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 60 V 125 ℃ 0.58V （@Tj=125℃） z z APPLICATIO

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R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

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