.
Jilin Sino
HBR3200 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃） 、 APPLICATIONS Low vol.
JILIN SINO-MICROELECTRONICS
D13009K - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W.
Sinopower
SM4370NSKP - N-Channel MOSFET
SM4370NSKP Features · 30V/50A, RDS(ON)=8.4mW (max.) @ VGS=10V RDS(ON)=12.6mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Ava.
JILIN SINO-MICROELECTRONICS
D13007M - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z .
JILIN SINO
SPE02M50T-C - Intelligent Power Module
Intelligent Power Module SPE02M50T-A_C ： 500V,2A（）， 1.2A（） MOSFET ： Main Function Parameter： and 500V,2A(Peak),1.2A(Continuou .
Sino Wealth Microelectronic
SH367108 - Series Lithium Battery Pack Protection
SH367105/SH367106/SH367107/SH367108 Pack 1. ： - VOV：3.6V - 4.5V (10mV) ：±25mV - VOVR1：3.3V - 4.5V (10mV) ：±50mV - VUV：2.0V - 3.1V (100mV) ：±50mV -.
Jilin Sino
HBR10150S - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃） APPLICATIONS .
Sinopower
SM4301PSK - P-Channel MOSFET
SM4301PSK ® P-Channel Enhancement Mode MOSFET Features · -30V/-17.5A, RDS(ON) =6.8mW(max.) @ VGS =-10V RDS(ON) =13mW(max.) @ VGS =-4.5V · Reliable a.
Jilin Sino
HBR2045 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃） APPLICAT.
JILIN SINO-MICROELECTRONICS
JCS18N50FH - N-CHANNEL MOSFET
N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie.
JILIN SINO-MICROELECTRONICS
JCS80N10SF - N-CHANNEL MOSFET
N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson（@Vgs=10V） 12 mΩ Qg 115nC Package z DC/DC z D APPLICATIONS.
Jilin Sino
JT040K065WED - N-CHANNEL IGBT
R MAIN CHARACTERISTICS IC VCE Vcesat-ty（p Vge=15V） 40 A 650V 1.7V N N-CHANNEL IGBT JT040K065WED/AED Package UPS APPLICATIONS Genera.
Sinopower
SM4513NHKP - N-Channel MOSFET
SM4513NHKP ® N-Channel Enhancement Mode MOSFET Features · 30V/70A, RDS(ON)= 2.7mW (Max.) @ VGS=10V RDS(ON)= 3.5mW (Max.) @ VGS=4.5V · Reliable and R.
Sinopower
SM6A23NSF - N-Channel MOSFET
SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V.
Sinopower
SM4024NSKP - N-Channel MOSFET
SM4024NSKP Features · 40V/60A, RDS(ON)= 4.6mW (max.) @ VGS=10V RDS(ON)= 5.9mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Av.
Sinopower
SM4373NAKP - N-Channel MOSFET
SM4373NAKP Features · 30V/70A, RDS(ON)= 3mW (max.) @ VGS=10V RDS(ON)= 4.3mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Avai.
Sinopower
SM2203NSQG - N-Channel MOSFET
SM2203NSQG Features • 30V/7.4A, RDS(ON) = 20.5mΩ(max.) @ VGS =10V RDS(ON) = 28.5mΩ(max.) @ VGS =4.5V • Reliable and Rugged • Lead Free and Green Devic.
JILIN SINO-MICROELECTRONICS
JCS630 - N-CHANNEL MOSFET
R JCS630 MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 9.0A 200 V 0.4Ω 22nC Package N N- CHANNEL MOSFET UPS APPLICATIONS High .
JILIN SINO-MICROELECTRONICS
JCS630R - N-CHANNEL MOSFET
R N N-CHANNEL MOSFET JCS630V/R/S/B/C/F MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg 9.0 A 200 V 0.4 Ω 22 nC z z z UPS APPLIC.