.
Solitron Devices
2N3821 - N-CHANNEL JFETS
2N3821 | 2N3822 N-CHANNEL JFETS - 1 KEY FEATURES JAN/JANTX/JANTXV STANDARD PRODUCTS QUALIFIED PER MIL-PRF-19500/375 LOW ON RESISTANCE FAST SWITCHING .
Solitron Devices
SSD5002 - N-Channel Enhancement Mode Quad D-Mos FET Analog Switch Arrays
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Solitron Devices
2N4221 - Low Power Field Effect Transistors
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Solitron Devices
SDM3000 - (SDMxxxx) Power Transistors
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Solitron Devices
SD11812 - 1200V Silicon Carbide Dual Schottky Doubler Diode
SD11812 1200V Silicon Carbide Dual Schottky Doubler Diode - 1 KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING .
Solitron Devices
SD11902 - SiC Half-Bridge Power Module
2 3 1 t’ 4 5 6 9 [+] Q1 D1 7 [~] Q2 D2 8 [-] PIN CONNECTIONS PIN DESCRIPTION 1 S1 2 G1 3 Temp. Monitoring 4 Temp. Monitoring 5 G2 .
Solitron Devices
SD11807 - 650V Silicon Carbide Schottky Diode
SD11807 650V Silicon Carbide Schottky Diode - 1 KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEP.
Solitron Devices
2N5912 - Dual Matched N-Channel JFET
2N5911 | 2N5912 Dual Matched N-Channel JFET - 1 FEATURES LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICA.
Solitron Devices
SSD5000 - N-Channel Enhancement Mode Quad D-Mos FET Analog Switch Arrays
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Solitron Devices
SSD5001 - N-Channel Enhancement Mode Quad D-Mos FET Analog Switch Arrays
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Solitron Devices
2N4220 - Low Power Field Effect Transistors
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Solitron Devices
BD130 - NPN Silicon Power
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Solitron Devices
SD11428 - 1200V Silicon Carbide IGBT
SD11428 1200V Silicon Carbide IGBT - 1 KEY FEATURES BVces 1200V Ids (on) @ 125°C 22A TO-3 PACKAGE BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWE.
Solitron Devices
2N4338 - N-Channel JFET
2N4338 | 2N4339 N-Channel JFET - 1 FEATURES LOW NOISE: 4.2NV/√HZ TYPICAL HIGH GAIN: 1.6MS TYPICAL (2N4339) LOW CUTOFF VOLTAGE: 2N4338 < 1.0V DESCRIPT.
Solitron Devices
SD11801 - 1200V Silicon Carbide Schottky Diode
SD11801 1200V Silicon Carbide Schottky Diode - 1 KEY FEATURES VRRM 1200V IF @ 125°C 10A SMALL FOOTPRINT ZERO REVERSE RECOVERY PLASTIC COTS PACKAGING .
Solitron Devices
SD11808 - 1700V 10A Silicon Carbide Schottky Diode
SD11808 1700V 10A Silicon Carbide Schottky Diode - 1 PROVISIONAL KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCH.
Solitron Devices
SD11810 - 650V Silicon Carbide Schottky Diode
SD11810 650V Silicon Carbide Schottky Diode - 1 KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEP.
Solitron Devices
SD11806 - Dual 1200V Silicon Carbide Schottky Diode
SD11806 Dual 1200V Silicon Carbide Schottky Diode - 1 KEY FEATURES VRRM 1200V IF @ 125°C 20A/40A ISOLATED BACKSIDE ZERO REVERSE RECOVERY TO-258 HERME.
Solitron Devices
SD11912 - SiC Dual MOSFET Power Module
PROVISIONAL Q1 2 [G1] 10 [D1] 3 1 [KS1] t° 9 [S1] 7 [D2] Q2 4 5 [G2] 6 [KS2] 8 [S2] PIN CONNECTIONS PIN DESCRIPTION 1 KS1 2 G1 3 Te.
Solitron Devices
SD11740 - 1200V SiC N-Channel Power MOSFET
KEY FEATURES ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B BENEFITS PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER SYSTEM EFFICIEN.