Super-junction Datasheet | Specifications & PDF Download

HCA60R040F Dec 2020 HCA60R040F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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HCS80R850S Dec 2019 HCS80R850S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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Silan Microelectronics SVS60R360FJH(FJD)(D)(L8A)E3_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS60R360FJH(FJD)(D)(L8A)E3 i

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●General Description The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device of

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Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel en

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DTN11N50SJ/DTP11N50SJ/DTP11N50FSJ www.din-tek.jp N-Channel 500V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 500 RDS(on) m

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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WSJM65R099DX Super-Junction Power MOSFET Rev.02 - 24 July 2024 Product data sheet 1. General description WSJM65R099DX is a high voltage N-channel MO

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HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely

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FQP15N60/FQPF15N60 600V 15A Super Junction MSFET General Description Product Summary The FQP15N60& FQPF15N60 have been fabricated using the advance

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WSJM65R120X Super-Junction Power MOSFET Rev.01 - 23 February 2024 Product data sheet 1. General description WSJM65R120X is a high voltage N-channel

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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CDMSJ22029-650 N-CHANNEL SUPER JUNCTION MOSFET 29 AMP, 650 VOLT TO-220FP CASE APPLICATIONS: • Power Factor Correction • TV Power • UPS • PD Charger •

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TPA100R500A,TPW100R500A Wuxi Unigroup Microelectronics Co.,Ltd 1000V Super-junction Power MOSFET Description 1000V Super-junction Power MOSFET Super-j

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WSJM65R120 Super-Junction Power MOSFET Rev.02 - 24 July 2024 Product data sheet 1. General description WSJM65R120 is a high voltage N-channel MOSFET

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NCE70R1K2,NCE70R1K2D,NCE70R1K2F N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction techno

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Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 700 RD

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