T64 Datasheet | Specifications & PDF Download

www.DataSheet.co.kr www.dianlimao.org I N TT 60 0 H TE N IA CL AL R R E FFE E RE E C MA L N U A L E 0C NC IH C RNEC N E NU MA A INT6400 HomePlug® AV

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BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated

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www.DataSheet4U.com 256MB / 512MB (x64) 168-PIN SDRAM DIMMs SYNCHRONOUS DRAM MODULE Features • PC100- and PC133-compliant • JEDEC-standard 168-pin,

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128MB, 256MB, 512MB (x72, ECC, SR) 200-Pin DDR SODIMM Features DDR SDRAM SODIMM MT9VDDT1672H – 128MB1 MT9VDDT3272H – 256MB MT9VDDT6472H – 512MB For co

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JIEJIE MICROELECTRONICS CO. , Ltd JCT640/840 Series 40A SCRs Rev.3.0 DESCRIPTION: JCTx40 series of silicon controlled rectifiers, with high abilit

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D a t a S h e e t , Rev. 0.87, J u n e 2 0 0 4 HYS64T32000[G/H]U–[3.7/5]–A HYS[64/72]T64000[G/H]U–[3.7/5]–A HYS[64/72]T128020[G/H]U–[3.7/5]–A 240-Pin

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CET6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.5A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. High dense cell

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MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Un

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512MB (SR), 1GB (DR): (x72, ECC) 168-Pin SDRAM UDIMM Features Synchronous DRAM Module MT9LSDT6472A - 512MB MT18LSDT12872A - 1GB For the latest data s

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FEATURES n 300 MHz –3dB Bandwidth n Fixed Gain of 12dB n Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) n Low Noise: 15dB NF, en = 2.6nV/√Hz (2

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Ver 1.0 BCT644 2:1 MIPI D-PHY(1.5Gbps) 4-Data Lane Switch GENERAL DESCRIPTION The BCT644 is a four-data-lane, MIPI, D-PHY switch. This single-pole, d

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PI74FCT245T/640T/645T PI74FCT2245T/2640T/2645T (25Ω Series) 123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456

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Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT6401 FEATURES ● Super high dense cell design for low RDS(ON) ●

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BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated

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128MB, 256MB, 512MB (x72, ECC, SR), PC3200 184-Pin DDR SDRAM UDIMM DDR SDRAM UNBUFFERED DIMM MT9VDDT1672A – 128MB MT9VDDT3272A – 256MB MT9VDDT6472A

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07  MOS-TECH Semiconductor Co.,LTD January 20 07  Single P-Channel PowerMOSFET -30V, -A, mΩ General Description This P-Channel Logic Le

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FT6X36 Self-Capacitive Touch Panel Controller INTRODUCTION The FT6X36 Series ICs are single-chip capacitive touch panel controller IC with a built-in

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