TC110 Datasheet | Specifications & PDF Download

MTC110/12A ZHEJIANG SHILING POWER ELECTRON CO.,LTD. SYMBOL CHARACTERISTIC TEST CONDITIONS VALUE Tj(°C) UNIT Min Type Max IT(AV) IT(RMS) V

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www.DataSheet4U.com R.1.120799 ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION The ITC1100 is a common base bipolar transistor

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LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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Preliminary Technical Information TrenchMVTM IXTC110N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche

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Thyristor/Thyristor Module Thyristor/Diode Module MECHANICAL DESCRIPTION The MTC, MFC module, combines the excellent thermal performances obtained by

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SEMICONDUCTOR TECHNICAL DATA DTC 101 ~ 108 DTC 110 ~ 112 / 114 /117 DTC 123 / 124 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with

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MTC110 Thyristor Modules Features Isolated mounting base 2500V~ Pressure contact technology with increased power cycling capability Space and w

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LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

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TC110 PFM/PWM Step-Up DC/DC Controller Features • • • • • Assured Start-up at 0.9V 50µA (Typ) Supply Current (fOSC = 100kHz) 300mA Output Current @ VI

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TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • • • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associa

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TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga =

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