TC110 Datasheet | Specifications & PDF Download

SEMICONDUCTOR TECHNICAL DATA DTC 101 ~ 108 DTC 110 ~ 112 / 114 /117 DTC 123 / 124 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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LTC1100 Precision, Zero-Drift Instrumentation Amplifier U U FEATURES ■ Offset Voltage: 10µV Max ■ Offset Voltage Drift: 100nV/°C Max ■ Bias Current:

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Preliminary Technical Information TrenchMVTM IXTC110N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche

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www.DataSheet4U.com R.1.120799 ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION The ITC1100 is a common base bipolar transistor

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TC1108 300mA CMOS LDO Features • • • • • • Extremely Low Supply Current (50µA, Typ.) Very Low Dropout Voltage 300mA Output Current High Output Voltage

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LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

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LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

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Shenzhen piandian Technology Co.,ltd /0.1 / 655 4 55 4#55 4>55 4655 /001 /%01 / 755 4$55 4=55 4 55 4755 2+01. 3 4#5 * (  ,    

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Thyristor/Thyristor Module Thyristor/Diode Module MECHANICAL DESCRIPTION The MTC, MFC module, combines the excellent thermal performances obtained by

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