1.0A Fast Recovery Rectifier TF101 – TF107 FR101.
TAITRON
TF101 - 1.0A Fast Recovery Rectifier
1.0A Fast Recovery Rectifier TF101 – TF107 FR101 – FR107 1.0A Fast Recovery Rectifier Features • Low forward voltage drop • High current capability •.
SamHop Microelectronics
STF1016C - N-Channel Enhancement Mode Field Effect Transistor
STF1016CGreen Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) .
Ericsson
PTF10111 - 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor
PTF 10111 6 Watts, 1.5 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applic.
Ericsson
PTF10122 - 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10122 is an internally matched common source N-channel enha.
Ericsson
PTF10125 - 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10125 is an internally matched, common source N-channel enhancem.
Ericsson
PTF10133 - 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cel.
Ericsson
PTF10134 - 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA a.
Ericsson
PTF10135 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
PTF 10135 5 Watts, 2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET int.
Ericsson
PTF10161 - 165 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor
PTF 10161 165 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended fo.
Ericsson
PTF10195 - 125 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor
PTF 10195 125 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The 10195 is an internally matched 125–watt GOLDMOS FET intended for ce.
NIPPON CHEMI-CON
KTF101B224M31NLT00 - MULTILAYER CERAMIC CHIP CAPACITORS
MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise .
NIPPON CHEMI-CON
KTF101B225M32NHT00 - MULTILAYER CERAMIC CHIP CAPACITORS
MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise .
NIPPON CHEMI-CON
KTF101B225M43NHT00 - MULTILAYER CERAMIC CHIP CAPACITORS
MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise .
NIPPON CHEMI-CON
KTF101B475M43EHT00 - MULTILAYER CERAMIC CHIP CAPACITORS
MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise .
Ericsson
PTF10100 - 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor
e PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mo.
Ericsson
PTF10107 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications .
Ericsson
PTF10112 - 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancemen.
Ericsson
PTF10119 - 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
PTF 10119 12 Watts, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10119 is an internally matched, common source, N-channel enhancem.
Ericsson
PTF10120 - 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhanceme.
Ericsson
PTF10136 - 6 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier appli.