TF101 Datasheet | Specifications & PDF Download

MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

(30 views)

MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

(27 views)

MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

(27 views)

MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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STF1016CGreen Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON)

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PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications

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Dual High-power Super Fast Rectifier Chip Integration Technology Corporation ETF10005CT THRU ETF1010CT 10 Amperes High Power Super Fast Rectifiers V

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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e PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mo

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cel

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High-power Super Fast Rectifier Chip Integration Technology Corporation ETF10005 THRU ETF1010 10 Amperes High Power Super Fast Rectifiers VOLTAGE :

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PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA a

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PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancemen

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PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhanceme

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